SKM600GB12T4

SKM600GB12T4 SEMITRANS® 3 Fast IGBT4 Modules SKM600GB12T4 Features* IGBT4 = 4th generation fast trench IGBT (Infineon) CAL4 = Soft switching 4th generation CAL-diode Insulated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequencies up to 20kHz UL recognized, file no. E63532 Typical Applications AC inverter drives UPS Electronic welders at fsw up to 20 kHz Remarks Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C GB © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol module without TIM AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(c-s) Rth(c-s) IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 24 mA VGE = 0 V, VCE = 1200 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V Tj = 150 °C IC = 600 A VGE = ...