SKiM601TMLI12E4B

SKiM601TMLI12E4B SKiM® 4 Trench IGBT Modules SKiM601TMLI12E4B Features IGBT 4 Trench Gate Technology Solder technology VCE(sat) with positive temperature coefficient Low inductance case Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate Pressure contact technology for thermal contacts Spring contact system to attach driver PCB to the control terminals High short circuit capability, self limiting to 6 x IC Integrated temperature sensor Remarks* Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) Recommended Top = -40 ...+150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer diodes D1 & D4 Diode2: inner diodes D2 & D3 Absolute Maximum Ratings Symbol Conditions IGBT1 VCES IC IC ICnom ICRM VGES tpsc Tj IGBT2 VCES IC IC ICnom ICRM VGES tpsc Tj Diode1 VRRM IF IF IFnom IFRM IFSM Tj Diode2 VRRM IF IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C ICRM = 3 x ICnom VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C ICRM = 3 x ICnom VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C Tj = 25 °C λpaste=...