SKM1400GB12P4

SKM1400GB12P4 SEMITRANS® 10 IGBT4 Modules SKM1400GB12P4 Features* Symmetrical current sharing Low-inductive module design High mechanical robustness UL recognized, file no. E63532 Typical Applications Motor Drives UPS Systems Solar Inverters Remarks Recommended Tjop = -40 ... +150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 100 °C ICnom ICRM VGES tpsc Tj VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 100 °C IFRM IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(c-s) IC = 1400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 49.2 mA VGE = 0 V, VCE = 1200 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 1400 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω di/dton = 11 kA/µs di/dtoff = 6.9 kA/µs dv/dt = 3300 V/µs Ls = 36 nH per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C per IGBT (λgrease=0.81 W/(m*K)) Values 1200 2165 1453 1400 2800 -20 ... 20 10 -40 ... 175 1200 1768 1135 2800 7296 -40 ... 175 -40 ... 150 4000 Unit V A A A A V µs °C V A A A A °C °C V min. 5.1 ty...