SKM75GB17E4H16

SKM75GB17E4H16 SEMITRANS® 2 IGBT4 Modules SKM75GB17E4H16 Features H16: IGBT-chip with improved robustness against moisture IGBT4 = 4. generation medium fast trench IGBT (Infineon) CAL4 = Soft switching 4. Generation CAL-Diode Insulated copper baseplate using DBC Technology (Direct Copper Bonding) With integrated Gate resistor For switching frequencies up to 8kHz UL recognized, file no. E63532 Typical Applications* Medium voltage inverter market Remarks Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3xICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 75 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 2.8 mA VGE = 0 V, VCE = 1700 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V Tj = 150 °C IC = 75 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω Tj = 150 °C ...