SKM150GB17E4

SKM150GB17E4 SEMITRANS® 2 IGBT4 Modules SKM150GB17E4 Features IGBT4 = 4. generation medium fast trench IGBT (Infineon) CAL4 = Soft switching 4. Generation CAL-Diode Insulated copper baseplate using DBC Technology (Direct Copper Bonding) With integrated Gate resistor For switching frequenzies up to 8kHz UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders Wind power Public transport Remarks Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1700 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 150 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C T...