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SKM400GB17E4 Dataheets PDF



Part Number SKM400GB17E4
Manufacturers Semikron
Logo Semikron
Description IGBT
Datasheet SKM400GB17E4 DatasheetSKM400GB17E4 Datasheet (PDF)

SKM400GB17E4 SEMITRANS® 3 IGBT4 Modules SKM400GB17E4 Features* • IGBT4 = 4th generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4th generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequencies up to 8kHz • UL recognized, file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic welders • Public transport • Wind power Remarks • Case temperature limited to Tc = 125°C.

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SKM400GB17E4 SEMITRANS® 3 IGBT4 Modules SKM400GB17E4 Features* • IGBT4 = 4th generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4th generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequencies up to 8kHz • UL recognized, file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic welders • Public transport • Wind power Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C GB © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2 x IFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol module without TIM AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 16 mA VGE = 0 V, VCE = 1700 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 400 A VGE = +15/-15 V RG on = 2 Ω RG off = 1 Ω di/dton = 10000 A/ µs Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dtoff = 2300 A/µs dv/dt = 5600 V/µs Tj = 150 °C Rth(j-c) Rth(c-s) Rth(c-s) per IGBT per IGBT (λgrease=0.81 W/(m*K)) per IGBT, pre-applied phase change material Rev. 7.0 – 06.05.2020 Values 1700 614 474 400 1200 -20 ... 20 10 -40 ... 175 1700 443 327 400 800 2340 -40 ... 175 500 -40 ... 125 4000 Unit V A A A A V µs °C V A A A A A °C A °C V min. 5.2 typ. 1.92 2.30 0.80 0.70 2.8 4.0 5.8 36.0 1.36 1.16 3200 1.9 280 45 157 760 140 180 0.028 0.017 max. Unit 2.20 V 2.60 V 0.90 V 0.80 V 3.3 mΩ 4.5 mΩ 6.4 V 5 mA nF nF nF nC Ω ns ns mJ ns ns mJ 0.066 K/W K/W K/W 1 SKM400GB17E4 SEMITRANS® 3 IGBT4 Modules SKM400GB17E4 Features* • IGBT4 = 4th generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4th generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequencies up to 8kHz • UL recognized, file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic welders • Public transport • Wind power Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Characteristics Symbol Conditions Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr chiplevel IF = 400 A di/dtoff = 10100 A/ µs Tj = 25 °C.


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