Document
SKM400GB17E4
SEMITRANS® 3
IGBT4 Modules
SKM400GB17E4 Features*
• IGBT4 = 4th generation medium fast trench IGBT (Infineon)
• CAL4 = Soft switching 4th generation CAL-Diode
• Insulated copper baseplate using DBC Technology (Direct Copper Bonding)
• With integrated Gate resistor • For switching frequencies up to 8kHz • UL recognized, file no. E63532
Typical Applications
• AC inverter drives • UPS • Electronic welders • Public transport • Wind power
Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C • Product reliability results valid
for Tj = 150°C
GB © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 3 x ICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2 x IFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
module without TIM AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
IC = 400 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 16 mA
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V IC = 400 A VGE = +15/-15 V RG on = 2 Ω RG off = 1 Ω di/dton = 10000 A/ µs
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dtoff = 2300 A/µs dv/dt = 5600 V/µs
Tj = 150 °C
Rth(j-c) Rth(c-s)
Rth(c-s)
per IGBT per IGBT (λgrease=0.81 W/(m*K)) per IGBT, pre-applied phase change material
Rev. 7.0 – 06.05.2020
Values
1700 614 474 400 1200 -20 ... 20
10
-40 ... 175
1700 443 327 400 800 2340 -40 ... 175
500 -40 ... 125
4000
Unit
V A A A A V
µs
°C
V A A A A A °C
A °C V
min. 5.2
typ.
1.92 2.30 0.80 0.70 2.8 4.0 5.8
36.0 1.36 1.16 3200 1.9 280 45 157 760 140
180
0.028 0.017
max. Unit
2.20
V
2.60
V
0.90
V
0.80
V
3.3
mΩ
4.5
mΩ
6.4
V
5
mA
nF
nF
nF
nC
Ω ns ns mJ ns ns
mJ
0.066 K/W K/W
K/W
1
SKM400GB17E4
SEMITRANS® 3
IGBT4 Modules
SKM400GB17E4
Features*
• IGBT4 = 4th generation medium fast trench IGBT (Infineon)
• CAL4 = Soft switching 4th generation CAL-Diode
• Insulated copper baseplate using DBC Technology (Direct Copper Bonding)
• With integrated Gate resistor • For switching frequencies up to 8kHz • UL recognized, file no. E63532
Typical Applications
• AC inverter drives • UPS • Electronic welders • Public transport • Wind power
Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C • Product reliability results valid
for Tj = 150°C
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 400 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr
chiplevel IF = 400 A di/dtoff = 10100 A/ µs
Tj = 25 °C.