SEMiX305TMLI17E4C

SEMiX305TMLI17E4C SEMiX® 5 3-Level TNPC IGBT-Module Engineering Sample SEMiX305TMLI17E4C Target Data Features Solderless assembling solution with PressFIT signal pins and screw power terminals IGBT 4 Trench Gate Technology VCE(sat) with positive temperature coefficient Low inductance case Reliable mechanical design with injection moulded terminals and reliable internal connections UL recognized file no. E63532 NTC temperature sensor inside Remarks* Case temperature limited to TC=125°C max. Product reliability results are valid for Tjop=150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer diodes D1 & D4 Diode2: inner diodes D2 & D3 Dynamic data are estimated For storage and case temperature with TIM see document “ TP (HALA P8) SEMiX5p “ Absolute Maximum Ratings Symbol Conditions IGBT1 VCES IC ICnom ICRM VGES tpsc Tj IGBT2 VCES IC ICnom ICRM VGES tpsc Tj Diode1 VRRM IF IFnom IFRM IFSM Tj Diode2 VRRM IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICRM = 3 x ICnom VCC = 1000 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤1700 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICRM = 3 x ICnom VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C module without TIM AC sinus 50Hz, t = 1 min Values 1700 486 376 ...