SKM500GB17E4

SKM500GB17E4 SEMITRANS® 3 IGBT4 Modules Evaluation Sample SKM500GB17E4 Target Data Features* IGBT4 = 4th generation medium fast trench IGBT (Infineon) CAL4 = Soft switching 4th generation CAL-Diode Insulated copper baseplate using DBC Technology (Direct Copper Bonding) With integrated Gate resistor For switching frequencies up to 8kHz UL recognized, file no. E63532 Typical Applications AC inverter drives UPS Electronic welders Wind power Public transport Remarks Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFRM IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg module without TIM Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(c-s) IC = 500 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 20 mA VGE = 0 V, VCE = 1700 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 500 A VGE = +15/-15 V RG on = 2 Ω RG off = 1 Ω di/d...