SEMiX453GD17E4c

SEMiX453GD17E4c SEMiX® 33c SEMiX453GD17E4c Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic Welding Remarks Case temperature limited to TC=125 °C max. Product reliability results are valid for Tj=150 °C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1700 V Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 450 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 7560 A/µs Tj = 150 °C di/dtoff = 2400 A/µs du/dt = 5320 V/µs Tj = 150 °C Ls = 30 nH Values 1700 762 579 450 1350 -20 ... 20 10 -40 ... 175 1700 482 354 450 900 2565 -4...