IGBT
SKM1400GAR17R8
SEMITRANS® 10
IGBT R8 Modules
SKM1400GAR17R8
Features*
• Symmetrical current sharing • Low-inductive mod...
Description
SKM1400GAR17R8
SEMITRANS® 10
IGBT R8 Modules
SKM1400GAR17R8
Features*
Symmetrical current sharing Low-inductive module design High mechanical robustness UL recognized, file no. E63532
Typical Applications
Brake chopper Windturbines
Remarks
Recommended Tjop = -40 ... +150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 100 °C
ICnom ICRM VGES
tpsc
Tj
VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 100 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 100 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES Cies Coes Cres QG RGint
IC = 1400 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
Tj = 25 °C Tj = 150 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VCE = 10 V, IC = 52.8 mA
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 15 V...+ 15 V Tj = 25 °C
Values
1700 2337 1527 1400 2800 -20 ... 20
10
-40 ... 175
1700 1874 1168 2800 9024 -40 ... 175
1700 1874 1168 2800 9024 -40 ... 175
-40 ... 150 4000
Unit
V A A A A V
µs
°C
V A A A A °C
V A A A A °C
°C V
min. 5
typ.
1.63 1.96 1.06 0.95 0.41 0.72 5.8
139.2 4.80 0.43 8640 1.3
max. Unit
1.95
V
2.27
V
1.12
V
1.05
V
0.59 mΩ
0.87 mΩ
6...
Similar Datasheet
- SKM1400GAR17R8 IGBT - Semikron