IGBT. SKM1000GB17R8 Datasheet

SKM1000GB17R8 IGBT. Datasheet pdf. Equivalent

SKM1000GB17R8 Datasheet
Recommendation SKM1000GB17R8 Datasheet
Part SKM1000GB17R8
Description IGBT
Feature SKM1000GB17R8; SKM1000GB17R8 SEMITRANS® 10 IGBT R8 Modules SKM1000GB17R8 Features* • Symmetrical current sharing •.
Manufacture Semikron
Datasheet
Download SKM1000GB17R8 Datasheet




Semikron SKM1000GB17R8
SKM1000GB17R8
SEMITRANS® 10
IGBT R8 Modules
SKM1000GB17R8
Features*
• Symmetrical current sharing
• Low-inductive module design
• High mechanical robustness
• UL recognized, file no. E63532
Typical Applications
• Motor Drives
• UPS Systems
• Solar Inverters
Remarks
Recommended Tjop = -40 ... +150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 100 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2 x ICnom
VCC = 1200 V
VGE 15 V
VCES 1700 V
Tj = 150 °C
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 100 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2 x IFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(c-s)
IC = 1000 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 36 mA
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V / +15V
Tj = 25 °C
VCC = 900 V
IC = 1000 A
VGE = +15/-15 V
RG on = 0.7 Ω
RG off = 0.7 Ω
di/dton = 7.8 kA/µs
di/dtoff = 4.8 kA/µs
dv/dt = 4600 V/µs
Ls = 24 nH
per IGBT
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
per IGBT (λgrease=0.81 W/(m*K))
Values
1700
1574
1027
1000
2000
-20 ... 20
10
-40 ... 175
1700
1449
905
1000
2000
6240
-40 ... 175
-40 ... 150
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
°C
V
min.
5
typ.
1.66
2.01
1.06
0.95
0.60
1.06
5.8
90.0
3.00
0.24
5640
1.8
476
105
465
713
158
332
0.016
max. Unit
1.99
V
2.33
V
1.12
V
1.05
V
0.87 mΩ
1.28 mΩ
6.5
V
6.0
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.03 K/W
K/W
GB
© by SEMIKRON
Rev. 4.0 – 28.05.2020
1



Semikron SKM1000GB17R8
SKM1000GB17R8
SEMITRANS® 10
IGBT R8 Modules
SKM1000GB17R8
Features*
• Symmetrical current sharing
• Low-inductive module design
• High mechanical robustness
• UL recognized, file no. E63532
Typical Applications
• Motor Drives
• UPS Systems
• Solar Inverters
Remarks
Recommended Tjop = -40 ... +150°C
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 1000 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
IF = 1000 A
di/dtoff = 8.1 kA/µs
VGE = -15 V
VCC = 900 V
per diode
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Module
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Ms
Mt
measured per switch, TC = 25 °C
calculated without thermal coupling
(λgrease=0.81 W/(m*K))
including thermal coupling,
Ts underneath module
(λgrease=0.81 W/(m*K))
to heat sink M5
to terminals M8
to terminals M4
w
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
min.
4
8
1.8
typ.
1.78
1.81
1.32
1.08
0.46
0.73
711
325
159
0.017
10
0.2
0.0041
0.007
493 ± 5%
3550
±2%
max.
2.12
2.14
1.56
1.22
0.56
0.92
0.042
6
10
2.1
1250
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
nH
mΩ
K/W
K/W
Nm
Nm
Nm
g
Ω
K
GB
2
Rev. 4.0 – 28.05.2020
© by SEMIKRON



Semikron SKM1000GB17R8
SKM1000GB17R8
Fig. 1: Output characteristics IGBT (typical); IC = f (VCE);
VGE = 15V; (chiplevel)
Fig. 2: Output characteristics IGBT (typical); IC = f (VCE);
Tj = 150 °C; (chiplevel)
Fig. 3: Switching losses IGBT (typical); E=f(IC)
Fig. 4: Switching losses IGBT (typical); E=f(RG)
Fig. 5: Transient thermal impedance IGBT
Fig. 6: RBSOA IGBT
© by SEMIKRON
Rev. 4.0 – 28.05.2020
3







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