MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
• S Prefix for Automotive and Other Applications...
MMBT3906L, SMMBT3906L
General Purpose
Transistor
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Collector Current − Peak (Note 3) THERMAL CHARACTERISTICS
Symbol VCEO VCBO VEBO IC ICM
Value −40 −40 −5.0 −200 −800
Unit Vdc Vdc Vdc mAdc mAdc
Characteristic
Total Device Dissipation FR− 5 Board (Note 1) @ TA = 25°C Derate above 25°C
Symbol PD
Max
225 1.8
Unit
mW mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) @ TA = 25°C Derate above 25°C
RqJA PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve.
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COLLECTOR 3
1 BASE
2 EMITTER
3 1
2
SOT−23 (TO−236) CASE 318 STYLE 6
MARKING DIAGRAM
2A M G G
1
2A = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in eith...
