LSC20N65

LSC20N65 LonFET Lonten N-channel 650V, 20A, 0.18Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(ON),max 0.18Ω IDM 60A Qg,typ 68nC Features  Ultra low Rdson  Ultra low gate charge (typ. Qg = 68nC)  100% UIS tested  RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Continuous diode forward current Diode pulse current Symbol VDSS ID IDM VGSS EAS EAR IAR PD TJ, TSTG IS IS,pulse LSC20N65 650 20 13 60 ±30 700 20.5 20 205 1.64 -55 to +150 20 60 Unit V A A A V mJ mJ A W W/°C °C A A Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Version 1.0 2012 RθJC RθJA Symbol 1 LSC20N65 0.61 60 Unit °C/W °C/W Package Marking and Ordering Information Device Device Package LSC20N65 TO-220 Electrical Characteristics Tc = 25°C unless otherwise noted Parameter Symbol Test Condition Static character...