N-channel MOSFET
LSB20N65
LonFET
Lonten N-channel 650V, 20A, 0.15Ω LonFETTM Power MOSFET
Description
LonFETTM Power MOSFET is fabricated...
Description
LSB20N65
LonFET
Lonten N-channel 650V, 20A, 0.15Ω LonFETTM Power MOSFET
Description
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
700V
RDS(on),max
0.15Ω
IDM
60A
Qg,typ
65nC
Features
Ultra low RDS(on) Ultra low gate charge (typ. Qg = 65nC) 100% UIS tested RoHS compliant
D G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 1) Avalanche current, repetitive 1)
Power Dissipation ( TC = 25°C ) - Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
Symbol VDSS ID
IDM VGSS EAS EAR IAR PD
TJ, TSTG IS IS,pulse
LSB20N65 650 20 13 60 ±30 700 20.5 20 205 1.64
-55 to +150 20 60
Unit V A A A V mJ mJ A W
W/°C °C A A
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Version 5.0 2013
Symbol RθJC RθJA
1
LSB20N65 0.61 60
Unit °C/W °C/W
www.lonten.cc
Package Marking and Ordering Information
Device
Device Package
LSB20N65
TO-247
Electrical Characteristics Tc = 25°C unless otherwise noted
Parameter
Symbol
Test Condition
S...
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