LSB20N65

LSB20N65 LonFET Lonten N-channel 650V, 20A, 0.15Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.15Ω IDM 60A Qg,typ 65nC Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 65nC)  100% UIS tested  RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Continuous diode forward current Diode pulse current Symbol VDSS ID IDM VGSS EAS EAR IAR PD TJ, TSTG IS IS,pulse LSB20N65 650 20 13 60 ±30 700 20.5 20 205 1.64 -55 to +150 20 60 Unit V A A A V mJ mJ A W W/°C °C A A Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Version 5.0 2013 Symbol RθJC RθJA 1 LSB20N65 0.61 60 Unit °C/W °C/W www.lonten.cc Package Marking and Ordering Information Device Device Package LSB20N65 TO-247 Electrical Characteristics Tc = 25°C unless otherwise noted Parameter Symbol Test Condition S...