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LSD04N65 Dataheets PDF



Part Number LSD04N65
Manufacturers Lonten
Logo Lonten
Description N-channel MOSFET
Datasheet LSD04N65 DatasheetLSD04N65 Datasheet (PDF)

LSC04N65/LSD04N65/LSG04N65/LSH04N65 LonFET Lonten N-channel 650V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.96Ω IDM 12A Qg,typ 13nC Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg =.

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LSC04N65/LSD04N65/LSG04N65/LSH04N65 LonFET Lonten N-channel 650V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.96Ω IDM 12A Qg,typ 13nC Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 13nC)  100% UIS tested  RoHS compliant TO-251 TO-252 TO-220 D TO-220F Applications  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 3) Avalanche current, repetitive 3) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Continuous diode forward current Diode pulse current Symbol VDSS ID IDM VGSS EAS EAR IAR PD TJ, TSTG IS IS,pulse LSX04N65 650 4 2.5 12 ±30 130 0.4 4 50 0.4 -55 to +150 4 12 Unit V A A A V mJ mJ A W W/°C °C A A Version 1.0 2016 1 www.lonten.cc LSC04N65/LSD04N65/LSG04N65/LSH04N65 LonFET Thermal Characteristics TO-251/TO-252/TO-220 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 2.5 °C/W Thermal Resistance, Junction-to-Ambient RθJA Thermal Characteristics TO-220F 62 °C/W Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 4.3 °C/W Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W Package Marking and Ordering Information Device Device Package LSC04N65 TO-220 LSD04N65 TO-220F LSG04N65 TO-252 LSH04N65 TO-251 Marking LSC04N65 LSD04N65 LSG04N65 LSH04N65 Electrical Characteristics Tc = 25°C unless otherwise noted Parameter Symbol Test Condition Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA Drain cut-off current IDSS VDS=650 V, VGS=0 V, Tj = 25°C Tj = 125°C Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V Gate leakage current, Reverse Drain-source on-state resistance IGSSR RDS(on) Gate resistance RG Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr VGS=-30 V, VDS=0 V VGS=10 V, ID=2 A Tj = 25°C Tj = 150°C f=1 MHz, open drain VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 300V, ID = 2A RG = 12Ω, VGS=10V Turn-off delay time Fall time Gate charge characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage td(off) tf Qgs Qgd Qg Vplateau VDD=480 V, ID=2A, VGS=0 to 10 V Version 1.0 2016 2 Min. Typ. Max. Unit 650 - - V 2.5 3.5 4.5 V μA - - 1 - 10.


LSC04N65 LSD04N65 LSG04N65


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