Document
LSC04N65/LSD04N65/LSG04N65/LSH04N65
LonFET
Lonten N-channel 650V, 4A, 0.96Ω LonFETTM Power MOSFET
Description
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
700V
RDS(on),max
0.96Ω
IDM
12A
Qg,typ
13nC
Features
Ultra low RDS(on) Ultra low gate charge (typ. Qg = 13nC) 100% UIS tested RoHS compliant
TO-251
TO-252
TO-220 D
TO-220F
Applications
Power faction correction (PFC). Switched mode power supplies (SMPS). Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 3) Avalanche current, repetitive 3)
Power Dissipation ( TC = 25°C ) - Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
Symbol VDSS ID
IDM VGSS EAS EAR IAR PD
TJ, TSTG IS IS,pulse
LSX04N65 650 4 2.5 12 ±30 130 0.4 4 50 0.4
-55 to +150 4 12
Unit V A A A V mJ mJ A W
W/°C °C A A
Version 1.0 2016
1
www.lonten.cc
LSC04N65/LSD04N65/LSG04N65/LSH04N65
LonFET
Thermal Characteristics TO-251/TO-252/TO-220
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
RθJC
2.5
°C/W
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Characteristics TO-220F
62
°C/W
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
RθJC
4.3
°C/W
Thermal Resistance, Junction-to-Ambient
RθJA
80
°C/W
Package Marking and Ordering Information
Device
Device Package
LSC04N65
TO-220
LSD04N65
TO-220F
LSG04N65
TO-252
LSH04N65
TO-251
Marking LSC04N65 LSD04N65 LSG04N65 LSH04N65
Electrical Characteristics Tc = 25°C unless otherwise noted
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
BVDSS
VGS=0 V, ID=0.25 mA
Gate threshold voltage
VGS(th)
VDS=VGS, ID=0.25mA
Drain cut-off current
IDSS
VDS=650 V, VGS=0 V,
Tj = 25°C
Tj = 125°C
Gate leakage current, Forward
IGSSF
VGS=30 V, VDS=0 V
Gate leakage current, Reverse Drain-source on-state resistance
IGSSR RDS(on)
Gate resistance
RG
Dynamic characteristics
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
VGS=-30 V, VDS=0 V VGS=10 V, ID=2 A Tj = 25°C Tj = 150°C f=1 MHz, open drain
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDD = 300V, ID = 2A RG = 12Ω, VGS=10V
Turn-off delay time Fall time Gate charge characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
td(off) tf
Qgs Qgd Qg Vplateau
VDD=480 V, ID=2A, VGS=0 to 10 V
Version 1.0 2016
2
Min.
Typ.
Max.
Unit
650
-
-
V
2.5
3.5
4.5
V
μA
-
-
1
-
10.