Barrier Rectifier. S10C45C Datasheet
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊In compliance with EU RoHs directives
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( Per diode )
Total Device (Rated VR), TC=100℃
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
Operating and Storage Junction Temperature
TJ , Tstg
-65 to +150
Maximum Instantaneous Forward Voltage
( IF =5 Amp TC = 25℃)
( IF =5 Amp TC = 125℃)
Typical Thermal Resistance junction to case
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
A 14.68 16.00
B 9.78 10.42
C 5.02 6.60
D 13.00 14.62
E 3.10 4.19
G 1.10 1.67
H 0.69 1.01
K 2.20 3.30
M 2.48 3.00
O 3.50 4.00
FIG-1 FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE (℃)
FIG-3 TYPICAL REVERSE CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG-5 PEAK FORWARD SURGE CURRENT
FIG-2 TYPICAL FORWARD CHARACTERISTICS
FORWARD VOLTAGE (V)
FIG-4 TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
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