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2SD880G Dataheets PDF



Part Number 2SD880G
Manufacturers UTC
Logo UTC
Description NPN Transistor
Datasheet 2SD880G Datasheet2SD880G Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free - 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T Pin Assignment: B: Base C: Collector E: Emi.

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UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free - 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-220 Pin Assignment 123 BCE BCE Packing Tube Tube  MARKING SOT-89 TO-220 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-013.G 2SD880 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current IC 3 A Base Current IB 0.5 A SOT-89 TO-220 TA=25 Power Dissipation SOT-89 PD TO-220 TC=25 0.55 1.5 W 3 30 Junction Temperature TJ 150 W Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Current gain bandwidth product SYMBOL BVCEO ICBO IEBO VCE(SAT) VBE(ON) hFE fT TEST CONDITIONS IC=50mA, IE=0 VCB=60V, IE=0 VEB=7V, IC=0 IC=3A, IB=300mA VCE=5V, IC=500mA IC=500mA, VCE=5V VCE=5V, IC=500mA MIN TYP MAX UNIT 60 V 100 µA 100 µA 1 V 1 V 100 200 3 MHZ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-013.G 2SD880  TYPICAL CHARACTERISTICS Voltage, V (V) DC Current Gain,hFE Power Dissipation, PD (W) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Current, IC (A) Collector Current, IC (A) Collector Current, IC (A) NPN SILICON TRANSISTOR 3 of 4 QW-R203-013.G 2SD880 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-013.G .


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