Ordering number : ENA0188B
2SB817C
Bipolar Transistor
–140V, –12A, Low VCE(sat) PNP TO-3P-3L
http://onsemi.com
Feature...
Ordering number : ENA0188B
2SB817C
Bipolar
Transistor
–140V, –12A, Low VCE(sat)
PNP TO-3P-3L
http://onsemi.com
Features
Large current capacitance Wide SOA and high durability against breakdown Adoption of MBIT process
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO IC ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
Conditions
Ratings
Unit
-160
V
-140
V
--6
V
--12
A
--20
A
2.5
W
120
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
18.4
Package Dimensions unit : mm (typ)
7539-001
15.6
4.8
1.5
2SB817C-1E
3.2
7.0
5.0
19.9
13.6
10.0
16.76
Product & Package Information
Package
: TO-3P-3L
JEITA, JEDEC
: SC-65, TO-247, SOT-199
Minimum Packing Quantity : 30 pcs./tube
Marking
B817C
LOT No.
Electrical Connection
2
1
3.5
20.0
2.0 3
3.0
1.0
0.6
123
1.4
5.45
5.45
1 : Base 2 : Collector 3 : Emitter
TO-3P-3L
Semiconductor Components Industries, LLC, 2013
January, 2014
12214 TKIM TC-00003086/N0508 MSIM TC-00001683/13106DA MSIM TB-00001810 No.A0188-1/4
2SB817C
Electri...
