NPT IGBT
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching...
Description
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
High Speed Switching Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A High Input Impedance Built-in Fast Recovery Diode
Applications
UPS, Welder
March 2014
General Description
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
GCE
TO-264 3L
Absolute Maximum Ratings
Symbol
VCES VGES
IC
ICM (1) IF
PD
TJ Tstg TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current Collector Current Pulsed Collector Current
Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC @ TC = 25oC @ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
©2000 Fairchild Semiconductor Corporation
1
FGL60N100BNTD Rev. C2
C
G
E
Ratings
1000 25 60 42 200 15 180 72 -55 to +150 -...
Similar Datasheet