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2SC3356L Dataheets PDF



Part Number 2SC3356L
Manufacturers AiT Semiconductor
Logo AiT Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC3356L Datasheet2SC3356L Datasheet (PDF)

AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR DESCRIPTION The 2SC3356L is available in SOT-23 package. ORDERING INFORMATION Package Type Part Number SOT-23 2SC3356L-X X=A,B Note See below hFE Classification Table SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products hFE CLASSIFICATION Classification Marking hFE A R24 80-140 B R25 120-200 FEATURES ⚫ High gain:︱S21E︱2 TYP. Value is 12dB @VCE=10V, IC=30mA, f=1GHz ⚫ Low noi.

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AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR DESCRIPTION The 2SC3356L is available in SOT-23 package. ORDERING INFORMATION Package Type Part Number SOT-23 2SC3356L-X X=A,B Note See below hFE Classification Table SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products hFE CLASSIFICATION Classification Marking hFE A R24 80-140 B R25 120-200 FEATURES ⚫ High gain:︱S21E︱2 TYP. Value is 12dB @VCE=10V, IC=30mA, f=1GHz ⚫ Low noise: NF TYP. Value is 1.5dB @VCE=10V, IC=7mA, f=1GHz ⚫ fT (TYP.) : TYP. Value is 8GHz @VCE=10V, IC=30mA ⚫ Ultra high frequency low noise transistor ⚫ Silicon epitaxial bipolar process. ⚫ High power gain, low noise figure, ⚫ High dynamic range and ideal current characteristics ⚫ Mainly used in VHF, UHF and CATV ⚫ High frequency wideband low noise amplifier. ⚫ Available in SOT-23 package PIN DESCRIPTION REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - -1- AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25℃, unless Otherwise noted VCBO, Collector-base breakdown voltage 20V VCEO, Collector-emitter breakdown voltage 15V VEBO, Emitter-base breakdown voltage 2V IC, Collector Current 100mA PC, Collector Power Dissipation 365mW TJ, Junction Temperature 150℃ TSTG, Storage Temperature -65℃~+150℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS TA = 25°C, unless otherwise specified Parameter Symbol Collector-base breakdown voltage VCBO Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain Bandwidth Product fT Insertion Power Gain S21E 2 Noise Factor NF Characteristic IC=1.0μA VCB=10V VEB=1.0V A VCE=5V, IC=20mA B VCE=10V, IC=30mA VCE=10V, IC=30mA, f =1.0GHz VCE=10V, IC=7mA, f=1.0GHz Min Typ. Max Unit 20 - - V - - 0.1 µA - - 0.1 µA 80 - 140 - 120 - 200 - 8 - GHz - 12 - dB - 1.5 - dB REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - -2- AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR TYPICAL CHARACTERISTICS TA = 25℃ Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Feed-Back Capacitance vs. Collector to Base Voltage Figure 3. Insertion Power Gain vs. Frequency Figure 4. Insertion Power Gain vs. Collector Current Figure 5. Noise Factor vs. Collector Current Figure 6. Insertion Power Gain, Noise Factor vs. Collector to Emitter Voltage REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - -3- AiT Semiconductor Inc. www.ait-ic.com Figure 7. DC Current Gain vs. Collector Current 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - -4- AiT Semiconductor Inc. www.ait-ic.com PACKAGE INFORMATION Dimension in SOT-23 Package (Unit: mm) 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR DIM MIN MAX A 0.35 0.5 B 1.4 1.7 C 2.7 3.1 D 0.95 G 1.7 2.1 H 2.7 3.1 K 1 1.3 L 0.5 0.85 M 0.1 0.35 REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - -5- AiT Semiconductor Inc. www.ait-ic.com IMPORTANT NOTICE 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale. REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - -6- .


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