Document
AiT Semiconductor Inc.
www.ait-ic.com
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
DESCRIPTION
The 2SC3356L is available in SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
2SC3356L-X
X=A,B
Note
See below hFE Classification Table
SPQ: 3,000pcs/Reel
AiT provides all RoHS Compliant Products
hFE CLASSIFICATION
Classification Marking hFE
A R24 80-140
B R25 120-200
FEATURES
⚫ High gain:︱S21E︱2 TYP. Value is 12dB @VCE=10V, IC=30mA, f=1GHz
⚫ Low noise: NF TYP. Value is 1.5dB @VCE=10V, IC=7mA, f=1GHz
⚫ fT (TYP.) : TYP. Value is 8GHz @VCE=10V, IC=30mA
⚫ Ultra high frequency low noise transistor ⚫ Silicon epitaxial bipolar process. ⚫ High power gain, low noise figure, ⚫ High dynamic range and ideal current
characteristics ⚫ Mainly used in VHF, UHF and CATV ⚫ High frequency wideband low noise amplifier. ⚫ Available in SOT-23 package
PIN DESCRIPTION
REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED -
-1-
AiT Semiconductor Inc.
www.ait-ic.com
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
TA=25℃, unless Otherwise noted
VCBO, Collector-base breakdown voltage
20V
VCEO, Collector-emitter breakdown voltage
15V
VEBO, Emitter-base breakdown voltage
2V
IC, Collector Current
100mA
PC, Collector Power Dissipation
365mW
TJ, Junction Temperature
150℃
TSTG, Storage Temperature
-65℃~+150℃
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
VCBO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Gain Bandwidth Product
fT
Insertion Power Gain
S21E 2
Noise Factor
NF
Characteristic
IC=1.0μA
VCB=10V VEB=1.0V
A VCE=5V, IC=20mA
B VCE=10V, IC=30mA VCE=10V, IC=30mA, f =1.0GHz VCE=10V, IC=7mA, f=1.0GHz
Min Typ. Max Unit
20
-
-
V
-
-
0.1 µA
-
-
0.1 µA
80
- 140
-
120 - 200
-
8
- GHz
-
12
-
dB
-
1.5
-
dB
REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED -
-2-
AiT Semiconductor Inc.
www.ait-ic.com
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
TYPICAL CHARACTERISTICS
TA = 25℃ Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Feed-Back Capacitance vs. Collector to Base Voltage
Figure 3. Insertion Power Gain vs. Frequency
Figure 4. Insertion Power Gain vs. Collector Current
Figure 5. Noise Factor vs. Collector Current
Figure 6. Insertion Power Gain, Noise Factor vs. Collector to Emitter Voltage
REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED -
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AiT Semiconductor Inc.
www.ait-ic.com
Figure 7. DC Current Gain vs. Collector Current
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED -
-4-
AiT Semiconductor Inc.
www.ait-ic.com
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm)
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
DIM
MIN
MAX
A
0.35
0.5
B
1.4
1.7
C
2.7
3.1
D
0.95
G
1.7
2.1
H
2.7
3.1
K
1
1.3
L
0.5
0.85
M
0.1
0.35
REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED -
-5-
AiT Semiconductor Inc.
www.ait-ic.com
IMPORTANT NOTICE
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.
REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED -
-6-
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