N-Channel MOSFET
HY1607D/U/V
N-Channel Enhancement Mode MOSFET
Features
• 68V/70A
RDS(ON) = 6.8 m(typ.) @ VGS=10V
• 100% avalanche te...
Description
HY1607D/U/V
N-Channel Enhancement Mode MOSFET
Features
68V/70A
RDS(ON) = 6.8 m(typ.) @ VGS=10V
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
G DS
G DS
TO-252-2L
TO-251-3L
Applications
Power Management for Inverter Systems.
Ordering and Marking Information
N-Channel MOSFET
D HY1607
YYXXXJWW G
U HY1607
YYXXXJWW G
Package Code D : TO-252-2L
Date Code YYXXX WW
U : TO-251-3L
Assembly Material G : Lead Free Device
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice.
www.hymexa.com
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V1.1
HY1607D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat ...
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