N-Channel MOSFET. HY1607U Datasheet

HY1607U MOSFET. Datasheet pdf. Equivalent

HY1607U Datasheet
Recommendation HY1607U Datasheet
Part HY1607U
Description N-Channel MOSFET
Feature HY1607U; HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V.
Manufacture HOOYI
Datasheet
Download HY1607U Datasheet




HOOYI HY1607U
HY1607D/U/V
N-Channel Enhancement Mode MOSFET
Features
68V/70A
RDS(ON) = 6.8 m(typ.) @ VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
G DS
G DS
TO-252-2L
TO-251-3L
Applications
Power Management for Inverter Systems.
Ordering and Marking Information
N-Channel MOSFET
D
HY1607
YYXXXJWW G
U
HY1607
YYXXXJWW G
Package Code
D : TO-252-2L
Date Code
YYXXX WW
U : TO-251-3L
Assembly Material
G : Lead Free Device
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
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HOOYI HY1607U
HY1607D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
68
±25
175
-55 to 175
70
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
280**
70
60
75
37.5
2
110
EAS Avalanche Energy, Single Pulsed
L=0.5mH
Notej* Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=55V
280**
Electrical Characteristics (T = 25C Unless Otherwise Noted)
C
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250A
VDS=68V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250A
VGS=±25V, VDS=0V
VGS=10V, IDS=35A
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=35A, VGS=0V
ISD=35A, dlSD/dt=100A/s
HY1607
Min. Typ. Max.
68 -
-
-
-
1
-
-
10
2
3
4
-
- ±100
-
6.8 8.5
- 0.8 1
-
33
-
-
60
-
Unit
V
A
V
nA
m
V
ns
nC
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HOOYI HY1607U
HY1607D/U/V
Electrical Characteristics (Cont.) (T = 25C Unless Otherwise Noted)
C
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=34V, RG= 5 ,
IDS=35A, VGS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=55V, VGS=10V,
IDS=35A
Note * : Pulse test ; pulse width 300s, duty cycle2%.
HY1607
Min. Typ. Max.
- 1.5
-
- 3200 -
- 351 -
- 290 -
-
14
-
-
13
-
-
20
-
-
7
-
-
84
-
-
13
-
-
27
-
Unit
pF
ns
nC
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