IRFU4615

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits IRFR4615PbF IRFU4615PbF HEXFET® Power MOSFET D VDSS 150V RDS(on) typ. 34m: max. 42m: S ID 33A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D D S G DPak IRFR4615PbF S D G IPAK IRFU4615PbF G Gate D Drain S Source Base Part Number IRFR4615PbF IRFR4615TRLPbF IRFU4615PbF Package Type D-PAK I-PAK Standard Pack Form Tube/Bulk Tape and Reel Left Tube/Bulk Quantity 75 3000 75 Orderable Part Number IRFR4615PbF IRFR4615TRLPbF IRFU4615PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM c Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage e Peak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics d EAS (Thermally limited) Single Pulse Avalanche Energy c IAR Avalanche Current c EAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter j Junction-to-Case i Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Notes  through ˆ are on page 11 Max. ...