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Image Sensor. IMX290LQR-C Datasheet |
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Diagonal 6.46 mm (Type 1/2.8) CMOS Solid-state Image Sensor with Square Pixel for
Color Cameras
Preliminary
IMX290LQR-C
Description
The IMX290LQR-C is a diagonal 6.46 mm (Type 1/2.8) CMOS active pixel type solid-state image sensor with a
square pixel array and 2.13 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V, and interface 1.8 V
triple power supply, and has low power consumption. High sensitivity, low dark current and no smear are achieved
through the adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variable
charge-integration time.
(Applications: Surveillance cameras, FA cameras, Industrial cameras)
Features
◆ CMOS active pixel type dots
◆ Built-in timing adjustment circuit, H/V driver and serial communication circuit
◆ Input frequency: 74.25 MHz / 37.125 MHz
◆ Number of recommended recording pixels: 1920 (H) × 1080 (V) approx. 2.07M pixel
◆ Readout mode
All-pixel scan mode
720p-HD readout mode
Window cropping mode
Vertical / Horizontal direction-normal / inverted readout mode
◆ Readout rate
Maximum frame rate in Full HD 1080p mode: 120 frame / s
◆ Wide dynamic range (WDR) function
Multiple exposure WDR
Digital overlap WDR
◆ Variable-speed shutter function (resolution 1H units)
◆ 10-bit / 12-bit A/D converter
◆ Conversion gain switching (HCG Mode / LCG Mode)
◆ CDS / PGA function
0 dB to 30 dB: Analog Gain 30 dB (step pitch 0.3 dB)
30.3 dB to 72 dB: Analog Gain 30 dB + Digital Gain 0.3 to 42 dB (step pitch 0.3 dB)
◆ Supports I/O switching
CMOS logic parallel SDR output
Low voltage LVDS (150 m Vp-p) serial ( 2 ch / 4 ch / 8ch switching) DDR output
CSI-2 serial data output ( 2 Lane / 4 Lane, RAW10 / RAW12 output)
◆ Recommended exit pupil distance: –30 mm to –∞
Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits.
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Device Structure
◆ CMOS image sensor
◆ Image size
Type 1/2.8
◆ Total number of pixels
1945 (H) × 1109 (V) approx. 2.16 M pixels
◆ Number of effective pixels
1945 (H) × 1097 (V) approx. 2.13 M pixels
◆ Number of active pixels
1937 (H) × 1097 (V) approx. 2.12 M pixels
◆ Number of recommended recording pixels
1920 (H) × 1080 (V) approx. 2.07 M pixels
◆ Unit cell size
2.9 µm (H) × 2.9 µm (V)
◆ Optical black
Horizontal (H) direction: Front 0 pixels, rear 0 pixels
Vertical (V) direction: Front 10 pixels, rear 0 pixels
◆ Dummy
Horizontal (H) direction: Front 0 pixels, rear 3 pixels
Vertical (V) direction: Front 0 pixels, rear 0 pixels
◆ Substrate material
Silicon
IMX290LQR-C
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IMX290LQR-C
Absolute Maximum Ratings
Item
Supply voltage (analog 2.9 V)
Supply voltage (interface 1.8 V)
Supply voltage (digital 1.2 V)
Input voltage
Output voltage
Symbol
Min.
Max.
Unit
Remarks
AVDD
-0.3
3.3
V
OVDD
-0.3
3.3
V
DVDD
-0.3
2.0
V
VI
-0.3
OVDD + 0.3 V Not exceed 3.3 V
VO
-0.3
OVDD + 0.3 V Not exceed 3.3 V
Application Conditions
Item
Symbol
Min.
Typ.
Max.
Unit
Supply voltage (analog 2.9 V)
AVDD
2.80
2.90
3.00
V
Supply voltage (Interface 1.8 V)
OVDD
1.70
1.80
1.90
V
Supply voltage (digital 1.2 V)
Performance guarantee temperature
DVDD
Tspec
1.10
1.20
1.30
V
-10
─
60
˚C
Operating guarantee temperature
Topr
-30
─
85
˚C
Storage guarantee temperature
Tstg
-40
─
85
˚C
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