MODULATION CONTROLLER. TL494CDG Datasheet

TL494CDG CONTROLLER. Datasheet pdf. Equivalent

TL494CDG Datasheet
Recommendation TL494CDG Datasheet
Part TL494CDG
Description PULSE WIDTH MODULATION CONTROLLER
Feature TL494CDG; TL494, NCV494 SWITCHMODE™ Pulse Width Modulation Control Circuit The TL494 is a fixed frequency, pul.
Manufacture ON Semiconductor
Datasheet
Download TL494CDG Datasheet




ON Semiconductor TL494CDG
TL494, NCV494
SWITCHMODEPulse Width
Modulation Control Circuit
The TL494 is a fixed frequency, pulse width modulation control
circuit designed primarily for SWITCHMODE power supply control.
Features
Complete Pulse Width Modulation Control Circuitry
On−Chip Oscillator with Master or Slave Operation
On−Chip Error Amplifiers
On−Chip 5.0 V Reference
Adjustable Deadtime Control
Uncommitted Output Transistors Rated to 500 mA Source or Sink
Output Control for Push−Pull or Single−Ended Operation
Undervoltage Lockout
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Pb−Free Packages are Available*
MAXIMUM RATINGS (Full operating ambient temperature range applies,
unless otherwise noted.)
Rating
Symbol
Value
Unit
Power Supply Voltage
Collector Output Voltage
Collector Output Current
(Each transistor) (Note 1)
VCC
42
V
VC1,
42
V
VC2
IC1, IC2
500
mA
Amplifier Input Voltage Range
Power Dissipation @ TA 45°C
Thermal Resistance, Junction−to−Ambient
Operating Junction Temperature
Storage Temperature Range
Operating Ambient Temperature Range
TL494B
TL494C
TL494I
NCV494B
VIR
PD
RqJA
TJ
Tstg
TA
−0.3 to +42 V
1000
mW
80
°C/W
125
°C
−55 to +125 °C
°C
−40 to +125
0 to +70
−40 to +85
−40 to +125
Derating Ambient Temperature
TA
45
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Maximum thermal limits must be observed.
http://onsemi.com
MARKING
DIAGRAMS
16
SOIC−16
D SUFFIX
CASE 751B
1
TL494xDG
AWLYWW
16
PDIP−16 *
N SUFFIX
CASE 648
1
TL494xN
AWLYYWWG
x
A
WL
YY, Y
WW, W
G
= B, C or I
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This marking diagram also applies to NCV494.
PIN CONNECTIONS
Noninv
Input
1
Inv
Input
2
Compen/PWN
Comp Input
3
Deadtime
Control
4
CT 5
RT 6
Ground 7
+
Error
−Amp
1
0.1 V
+
2
Error
Amp−
VCC
5.0 V
REF
Oscillator
Q2
16
Noninv
Input
15
Inv
Input
14 Vref
13
Output
Contro
l
12 VCC
11 C2
10 E2
C1 8
Q1
9 E1
(Top View)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 6
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
TL494/D



ON Semiconductor TL494CDG
TL494, NCV494
RECOMMENDED OPERATING CONDITIONS
Characteristics
Power Supply Voltage
Collector Output Voltage
Collector Output Current (Each transistor)
Amplified Input Voltage
Current Into Feedback Terminal
Reference Output Current
Timing Resistor
Timing Capacitor
Oscillator Frequency
Symbol
VCC
VC1, VC2
IC1, IC2
Vin
lfb
lref
RT
CT
fosc
Min
7.0
−0.3
1.8
0.0047
1.0
Typ
15
30
30
0.001
40
Max
Unit
40
V
40
V
200
mA
VCC − 2.0
V
0.3
mA
10
mA
500
kW
10
mF
200
kHz
ELECTRICAL CHARACTERISTICS (VCC = 15 V, CT = 0.01 mF, RT = 12 kW, unless otherwise noted.)
For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies, unless otherwise noted.
Characteristics
Symbol
Min
Typ
Max
Unit
REFERENCE SECTION
Reference Voltage (IO = 1.0 mA)
Line Regulation (VCC = 7.0 V to 40 V)
Load Regulation (IO = 1.0 mA to 10 mA)
Short Circuit Output Current (Vref = 0 V)
OUTPUT SECTION
Collector Off−State Current
(VCC = 40 V, VCE = 40 V)
Emitter Off−State Current
VCC = 40 V, VC = 40 V, VE = 0 V)
Collector−Emitter Saturation Voltage (Note 2)
Common−Emitter (VE = 0 V, IC = 200 mA)
Emitter−Follower (VC = 15 V, IE = −200 mA)
Output Control Pin Current
Low State (VOC v 0.4 V)
High State (VOC = Vref)
Output Voltage Rise Time
Common−Emitter (See Figure 12)
Emitter−Follower (See Figure 13)
Vref
4.75
5.0
5.25
V
Regline
2.0
25
mV
Regload
3.0
15
mV
ISC
15
35
75
mA
IC(off)
2.0
100
mA
IE(off)
−100
mA
V
Vsat(C)
1.1
1.3
Vsat(E)
1.5
2.5
IOCL
IOCH
tr
10
mA
0.2
3.5
mA
ns
100
200
100
200
Output Voltage Fall Time
Common−Emitter (See Figure 12)
Emitter−Follower (See Figure 13)
tf
ns
25
100
40
100
2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.
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2



ON Semiconductor TL494CDG
TL494, NCV494
ELECTRICAL CHARACTERISTICS (VCC = 15 V, CT = 0.01 mF, RT = 12 kW, unless otherwise noted.)
For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies, unless otherwise noted.
Characteristics
Symbol
Min
Typ
Max
Unit
ERROR AMPLIFIER SECTION
Input Offset Voltage (VO (Pin 3) = 2.5 V)
Input Offset Current (VO (Pin 3) = 2.5 V)
Input Bias Current (VO (Pin 3) = 2.5 V)
Input Common Mode Voltage Range (VCC = 40 V, TA = 25°C)
Open Loop Voltage Gain (DVO = 3.0 V, VO = 0.5 V to 3.5 V, RL = 2.0 kW)
Unity−Gain Crossover Frequency (VO = 0.5 V to 3.5 V, RL = 2.0 kW)
Phase Margin at Unity−Gain (VO = 0.5 V to 3.5 V, RL = 2.0 kW)
Common Mode Rejection Ratio (VCC = 40 V)
Power Supply Rejection Ratio (DVCC = 33 V, VO = 2.5 V, RL = 2.0 kW)
Output Sink Current (VO (Pin 3) = 0.7 V)
Output Source Current (VO (Pin 3) = 3.5 V)
PWM COMPARATOR SECTION (Test Circuit Figure 11)
Input Threshold Voltage (Zero Duty Cycle)
Input Sink Current (V(Pin 3) = 0.7 V)
DEADTIME CONTROL SECTION (Test Circuit Figure 11)
Input Bias Current (Pin 4) (VPin 4 = 0 V to 5.25 V)
Maximum Duty Cycle, Each Output, Push−Pull Mode
(VPin 4 = 0 V, CT = 0.01 mF, RT = 12 kW)
(VPin 4 = 0 V, CT = 0.001 mF, RT = 30 kW)
Input Threshold Voltage (Pin 4)
(Zero Duty Cycle)
(Maximum Duty Cycle)
VIO
IIO
IIB
VICR
AVOL
fC−
fm
CMRR
PSRR
IO−
IO+
VTH
II−
IIB (DT)
DCmax
Vth
2.0
10
mV
5.0
250
nA
−0.1
−1.0
mA
−0.3 to VCC−2.0
V
70
95
dB
350
kHz
65
deg.
65
90
dB
100
dB
0.3
0.7
mA
2.0
−4.0
mA
2.5
4.5
V
0.3
0.7
mA
−2.0
−10
mA
%
45
48
50
45
50
V
2.8
3.3
0
OSCILLATOR SECTION
Frequency (CT = 0.001 mF, RT = 30 kW)
Standard Deviation of Frequency* (CT = 0.001 mF, RT = 30 kW)
Frequency Change with Voltage (VCC = 7.0 V to 40 V, TA = 25°C)
Frequency Change with Temperature (DTA = Tlow to Thigh)
(CT = 0.01 mF, RT = 12 kW)
UNDERVOLTAGE LOCKOUT SECTION
Turn−On Threshold (VCC increasing, Iref = 1.0 mA)
TOTAL DEVICE
Standby Supply Current (Pin 6 at Vref, All other inputs and outputs open)
(VCC = 15 V)
(VCC = 40 V)
Average Supply Current
(CT = 0.01 mF, RT = 12 kW, V(Pin 4) = 2.0 V)
(VCC = 15 V) (See Figure 12)
fosc
sfosc
Dfosc (DV)
Dfosc (DT)
Vth
5.5
ICC
40
3.0
0.1
6.43
5.5
7.0
7.0
kHz
%
%
12
%
7.0
V
mA
10
15
mA
* Standard deviation is a measure of the statistical distribution about the mean as derived from the formula, s
N
S (Xn − X)2
n=1
N−1
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