CGHV1J006D

CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J006D Features 17 dB Typ. Small Signal Gain at 10 GHz 60% Typ. PAE at 10 GHz 6 W Typical PSAT 40 V Operation Up to 18 GHz Operation Applications Satellite Communications PTP Communications Links Marine Radar Pleasure Craft Radar Port Vessel Traffic Services Broadband Amplifiers High Efficiency Amplifiers Packaging Information Bare die are shipped in Gel-Pak® containers Non-adhesive tacky membrane immobilizes die during shipment Large Signal Models Available for ADS and MWO Rev 1.1 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV1J006D 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Drain-source Voltage VDSS Gate-source Voltage VGS Storage Temperature TSTG Operating Junction Temperature TJ Maximum Forward Gate Current IGMAX Maximum Drain Current1 IDMAX Thermal Resistance, Junction to Case (packaged)2 RθJC Thermal Resistance, Junction to Case (die only)2 RθJC Mounting Temperature TS Notes: 1 Current limit for long term, reliable operation. 2 Eutectic di...