CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electr...
CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D
Features
17 dB Typ. Small Signal Gain at 10 GHz
60% Typ. PAE at 10 GHz
6 W Typical PSAT 40 V Operation
Up to 18 GHz Operation
Applications Satellite Communications PTP Communications Links Marine Radar Pleasure Craft Radar Port Vessel Traffic Services Broadband Amplifiers High Efficiency Amplifiers
Packaging Information Bare die are shipped in Gel-Pak® containers Non-adhesive tacky membrane immobilizes die during shipment
Large Signal Models Available for ADS and MWO Rev 1.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CGHV1J006D
2
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Drain-source Voltage
VDSS
Gate-source Voltage
VGS
Storage Temperature
TSTG
Operating Junction Temperature
TJ
Maximum Forward Gate Current
IGMAX
Maximum Drain Current1
IDMAX
Thermal Resistance, Junction to Case (packaged)2 RθJC
Thermal Resistance, Junction to Case (die only)2
RθJC
Mounting Temperature
TS
Notes: 1 Current limit for long term, reliable operation. 2 Eutectic di...