CMPA801B025

CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance. PNs: CMPA801B025F and CMPA801B025P Package Types: 440213 and 440216 Typical Performance Over 8.5 - 11.0 GHz (TC = 25˚C) Parameter Output Power1 Output Power1 Power Added Efficiency1 8.5 GHz 38.0 45.8 37.0 10.0 GHz 37.0 45.7 36.0 Note1: Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty 11.0 GHz 35.5 45.5 35.0 Units W dBm % Features 8.5 - 11.0 GHz Operation 37 W POUT typical 16 dB Power Gain 36% Typical PAE 50 Ohm Internally Matched <0.1 dB Power Droop Applications Marine Radar Communications Satellite Communication Uplink Rev 4.1 - April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CMPA801B025 2 Absolute Maximum Ratings (not simultaneous) Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage Temperature Operating Junction Tempera...