CMPA801B030D

CMPA801B030D 30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over 8.0-11.0 GHz (TC = 85˚C) Parameter 8.0 GHz 8.5 GHz Small Signal Gain 31 30 POUT @ PIN = 27 dBm, 100 μs @ 10% 37 39 Power Gain @ PIN = 27 dBm, 100 μs @ 10% 19 19 PAE @ PIN = 27 dBm, 100 μs @ 10% 41 42 9.0 GHz 27 37 19 43 10.0 GHz 25 28 18 34 11.0 GHz 25 29 18 36 Units dB W dB % Features 28 dB Small Signal Gain 40 W Typical PSAT Operation up to 28 V High Breakdown Voltage High Temperature Operation Size 0.142 x 0.188 x 0.004 inches Applications Point to Point Radio Communications Test Instrumentation EMC Amplifiers Radar Rev 0.2 – March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CMPA801B030D 2 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Drain source Voltage Gate source Voltage Storage Temperature Operating Junction Temperature VDSS 84 VGS -1...