DatasheetsPDF.com

CMPA9396025S Dataheets PDF



Part Number CMPA9396025S
Manufacturers Wolfspeed
Logo Wolfspeed
Description GaN MMIC Power Amplifier
Datasheet CMPA9396025S DatasheetCMPA9396025S Datasheet (PDF)

CMPA9396025S 9.3 - 9.6 GHz, 25 W, Packaged GaN MMIC Power Amplifier Description Wolfspeed's CMPA9396025S is a GaN MMIC designed specifically from 9.3-9.6 GHz to be compact and provide high-efficiency, which makes it ideal for marine radar amplifier applications. The MMIC delivers 25W at 100usec pulse width and 10% duty cycle. The 50-ohm, 3-stage MMIC is available in a plastic surface-mount package. PN: CMPA9396025S Package Type: 6 x 6 QFN Typical Performance Over 9.3 - 9.6 GHz (TC = 25˚C) Par.

  CMPA9396025S   CMPA9396025S


Document
CMPA9396025S 9.3 - 9.6 GHz, 25 W, Packaged GaN MMIC Power Amplifier Description Wolfspeed's CMPA9396025S is a GaN MMIC designed specifically from 9.3-9.6 GHz to be compact and provide high-efficiency, which makes it ideal for marine radar amplifier applications. The MMIC delivers 25W at 100usec pulse width and 10% duty cycle. The 50-ohm, 3-stage MMIC is available in a plastic surface-mount package. PN: CMPA9396025S Package Type: 6 x 6 QFN Typical Performance Over 9.3 - 9.6 GHz (TC = 25˚C) Parameter 9.3 GHz Small Signal Gain 36.0 Output Power1 37.0 Power Gain1 26.7 Power Added Efficiency1 41 9.4 GHz 35.9 37.5 26.7 42 9.5 GHz 35.9 37.5 26.7 42 Notes: 1PIN = 19 dBm, Pulse Width = 100 μs; Duty Cycle = 10%, VD = 40 V, IDQ = 260 mA 9.6 GHz 36.2 37.0 26.7 41 Units dB W dB % Features Applications • 9.3 - 9.6 GHz Operation • Marine radar • 30 W Typical Output Power • Military radar • 27 dB Power Gain • 50-ohm Matched for Ease of Use • Plastic Surface-Mount Package, 6x6 mm QFN Note: Features are typical performance across frequency under 25°C operation. Please reference performance charts for additional details. Figure 1. Rev 0.0 – October 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CMPA9396025S 2 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Drain-source Voltage Gate-source Voltage Storage Temperature Maximum Forward Gate Current Maximum Drain Current Soldering Temperature Symbol VDSS VGS TSTG IG IDMAX TS Rating 120 -10, +2 -65, +150 8.6 8.6 260 Units VDC VDC ˚C mA A ˚C Conditions 25°C 25°C 25°C Electrical Characteristics (Frequency = 9.3 GHz to 9.6 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current2 Drain-Source Breakdown Voltage RF Characteristics3,4 VGS(TH) VGS(Q) IDS VBD -3.6 - -2.4 – -2.65 – 6.2 8.6 – 100 – – V VDS = 10 V, ID = 8.6 mA VDC VDD = 40 V, IDQ = 260 mA A VDS = 6.0 V, VGS = 2.0 V V VGS = -8 V, ID = 8.6 mA Small Signal Gain S211 – 36.0 – dB VDD = 40 V, IDQ = 260 mA, Freq = 9.3 GHz Small Signal Gain S212 – 36.2 – dB VDD = 40 V, IDQ = 260 mA, Freq = 9.6 GHz Output Power POUT1 – 37.0 – W VDD = 40 V, IDQ = 260 mA, Freq = 9.3 GHz Output Power POUT2 – 37.0 – W VDD = 40 V, IDQ = 260 mA, Freq = 9.6 GHz Power Added Efficiency PAE1 – 41 – % VDD = 40 V, IDQ = 260 mA, Freq = 9.3 GHz Power Added Efficiency PAE2 – 41 – % VDD = 40 V, IDQ = 260 mA, Freq = 9.6 GHz Power Gain GP – 26.0 – dB VDD = 40 V, IDQ = 260 mA, PIN = 19 dBm Input Return Loss S11 – -11.4 – dB VDD = 40 V, IDQ = 260 mA, Freq = 9.3 - 9.6 GHz Output Return Loss S22 – -8.2 – dB VDD = 40 V, IDQ = 260 mA, Freq = 9.3 - 9.6 GHz Output Mismatch Stress VSWR – – 3:1 Y No damage at all phase angles, VDD = 40 V, IDQ = 260 mA, PIN = 19 dBm Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CMPA9396025S high volume test fixture at 9.3 and 9.6 GHz and may not show the full capability of the device due to source inductance and thermal performance. 4 PIN = 19 dBm, Pulse Width = 25 μs; Duty Cycle = 1% Thermal Characteristics Parameter Operating Junction Temperature Thermal Resistance, Junction to Case (packaged)1 Notes: 1 Measured for the CMPA9396025S at PDISS = 28.6 W Symbol TJ RθJC Rating 225 1.94 Units ˚C ˚C/W Conditions Pulse Width = 100 μs, Duty Cycle =10% Rev 0.0 – October 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CMPA9396025S 3 Typical Performance of the CMPA9396025S Test conditions unless otherwise noted: VD = 40 V, IDQ = 260 mA, PW = 100 μs, DC = 10%, Pin = 19 dBm, TBASE = +25 °C Output Power (dBm) Power Added Eff (%) PAE (%) Figure 1. Output Power vs Frequency as a Function of Temperature Figure 1. – Output Power vs Frequency as a Function of Temperature 49.6 47.6 45.6 43.6 41.6 70 °C 10 °C -40 °C 39.6 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 Frequency (GHz) Frequency (GHz) Figure 3. Power Added Eff. vs Frequency as a Function of Temperature Figure 3. – Power Added Eff. Vs Frequency as a Function of Temperature 53 70 °C 10 °C -40 °C 48 43 38 33 28 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 Frequency (GHz) Frequency (GHz) Figure 5. Drain Current vs Frequency as a Function of Temperature Figure 5. – Drain Current vs Frequency as a Function of Temperature 2.3 2.2 2.1 70 °C 10 °C -40 °C 2.0 1.9 1.8 1.7 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 Frequency (GHz) Frequency (GHz) Drain Current (A) Power Added Eff (%) Output Power (dBm) Figure 2. Output Power vs Frequency as a Function of Input Power Figure 2. – Output Power vs Frequency as a Function of Input Power 50.5 48.5 46.5 44.5 42.5 40.5 9.3 9.4 9.5 Frequency (GHz) Frequency (GHz) 17 dBm 19 dBm 21 dBm 23 dBm 25 dBm 9.6 Figure 4. Power Added Eff. vs Frequenc.


CMPA801B030F CMPA9396025S CMPA801B030S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)