Document
CMPA9396025S
9.3 - 9.6 GHz, 25 W, Packaged GaN MMIC Power Amplifier
Description
Wolfspeed's CMPA9396025S is a GaN MMIC designed specifically from 9.3-9.6 GHz to be compact and provide high-efficiency, which makes it ideal for marine radar amplifier applications. The MMIC delivers 25W at 100usec pulse width and 10% duty cycle. The 50-ohm, 3-stage MMIC is available in a plastic surface-mount package.
PN: CMPA9396025S Package Type: 6 x 6 QFN
Typical Performance Over 9.3 - 9.6 GHz (TC = 25˚C)
Parameter
9.3 GHz
Small Signal Gain
36.0
Output Power1
37.0
Power Gain1
26.7
Power Added Efficiency1 41
9.4 GHz 35.9 37.5 26.7 42
9.5 GHz 35.9 37.5 26.7 42
Notes: 1PIN = 19 dBm, Pulse Width = 100 μs; Duty Cycle = 10%, VD = 40 V, IDQ = 260 mA
9.6 GHz 36.2 37.0 26.7 41
Units dB W dB %
Features
Applications
• 9.3 - 9.6 GHz Operation
• Marine radar
• 30 W Typical Output Power
• Military radar
• 27 dB Power Gain
• 50-ohm Matched for Ease of Use
• Plastic Surface-Mount Package, 6x6 mm QFN
Note: Features are typical performance across frequency under 25°C operation. Please reference performance charts for additional details.
Figure 1.
Rev 0.0 – October 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CMPA9396025S
2
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter Drain-source Voltage Gate-source Voltage Storage Temperature Maximum Forward Gate Current Maximum Drain Current Soldering Temperature
Symbol VDSS VGS TSTG IG IDMAX TS
Rating 120 -10, +2 -65, +150 8.6 8.6 260
Units VDC VDC ˚C mA A ˚C
Conditions 25°C 25°C
25°C
Electrical Characteristics (Frequency = 9.3 GHz to 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current2 Drain-Source Breakdown Voltage RF Characteristics3,4
VGS(TH) VGS(Q) IDS VBD
-3.6 - -2.4
– -2.65 –
6.2 8.6 –
100 –
–
V VDS = 10 V, ID = 8.6 mA VDC VDD = 40 V, IDQ = 260 mA A VDS = 6.0 V, VGS = 2.0 V V VGS = -8 V, ID = 8.6 mA
Small Signal Gain
S211
– 36.0 –
dB VDD = 40 V, IDQ = 260 mA, Freq = 9.3 GHz
Small Signal Gain
S212
– 36.2 –
dB VDD = 40 V, IDQ = 260 mA, Freq = 9.6 GHz
Output Power
POUT1
– 37.0 –
W VDD = 40 V, IDQ = 260 mA, Freq = 9.3 GHz
Output Power
POUT2
– 37.0 –
W VDD = 40 V, IDQ = 260 mA, Freq = 9.6 GHz
Power Added Efficiency
PAE1
– 41
–
% VDD = 40 V, IDQ = 260 mA, Freq = 9.3 GHz
Power Added Efficiency
PAE2
– 41
–
% VDD = 40 V, IDQ = 260 mA, Freq = 9.6 GHz
Power Gain
GP
– 26.0 –
dB VDD = 40 V, IDQ = 260 mA, PIN = 19 dBm
Input Return Loss
S11
– -11.4 –
dB VDD = 40 V, IDQ = 260 mA, Freq = 9.3 - 9.6 GHz
Output Return Loss
S22
– -8.2 –
dB VDD = 40 V, IDQ = 260 mA, Freq = 9.3 - 9.6 GHz
Output Mismatch Stress
VSWR –
–
3:1
Y
No damage at all phase angles, VDD = 40 V, IDQ = 260 mA, PIN = 19 dBm
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CMPA9396025S high volume test fixture at 9.3 and 9.6 GHz and may not show the full capability of the device due to source inductance and thermal
performance.
4 PIN = 19 dBm, Pulse Width = 25 μs; Duty Cycle = 1%
Thermal Characteristics
Parameter Operating Junction Temperature Thermal Resistance, Junction to Case (packaged)1
Notes: 1 Measured for the CMPA9396025S at PDISS = 28.6 W
Symbol TJ RθJC
Rating 225 1.94
Units ˚C ˚C/W
Conditions Pulse Width = 100 μs, Duty Cycle =10%
Rev 0.0 – October 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
CMPA9396025S
3
Typical Performance of the CMPA9396025S
Test conditions unless otherwise noted: VD = 40 V, IDQ = 260 mA, PW = 100 μs, DC = 10%, Pin = 19 dBm, TBASE = +25 °C
Output Power (dBm)
Power Added Eff (%) PAE (%)
Figure 1. Output Power vs Frequency as a Function of Temperature Figure 1. – Output Power vs Frequency as a Function of
Temperature
49.6
47.6
45.6
43.6
41.6
70 °C 10 °C -40 °C
39.6
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
Frequency (GHz)
Frequency (GHz)
Figure 3. Power Added Eff. vs Frequency as a Function of Temperature Figure 3. – Power Added Eff. Vs Frequency as a Function of
Temperature
53 70 °C 10 °C -40 °C
48
43
38
33
28
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
Frequency (GHz)
Frequency (GHz)
Figure 5. Drain Current vs Frequency as a Function of Temperature
Figure 5. – Drain Current vs Frequency as a Function of Temperature
2.3
2.2
2.1
70 °C
10 °C
-40 °C
2.0
1.9
1.8
1.7
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
Frequency (GHz)
Frequency (GHz)
Drain Current (A)
Power Added Eff (%)
Output Power (dBm)
Figure 2. Output Power vs Frequency
as a Function of Input Power Figure 2. – Output Power vs Frequency as a Function of Input
Power 50.5
48.5
46.5
44.5
42.5
40.5 9.3
9.4
9.5
Frequency (GHz)
Frequency (GHz)
17 dBm 19 dBm 21 dBm 23 dBm 25 dBm
9.6
Figure 4. Power Added Eff. vs Frequenc.