GaN HEMT. CGHV96050F2 Datasheet

CGHV96050F2 HEMT. Datasheet pdf. Equivalent

CGHV96050F2 Datasheet
Recommendation CGHV96050F2 Datasheet
Part CGHV96050F2
Description GaN HEMT
Feature CGHV96050F2; CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96050F.
Manufacture Wolfspeed
Datasheet
Download CGHV96050F2 Datasheet




Wolfspeed CGHV96050F2
CGHV96050F2
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output
Matched GaN HEMT
Description
Cree’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
PN: CGHV96050F2
Package Type: 440217
Typical Performance Over 8.4 - 9.6 GHz (TC = 25˚C)
Parameter
Linear Gain
Output Power
Power Gain
Power Added Efficiency
8.4 GHz
13.8
85
10.4
57
8.8 GHz
12.8
77
9.9
54
9.0 GHz
12.3
81
10.1
52
9.2 GHz
12.3
82
10.1
54
9.4 GHz
12.2
75
8.8
48
Note: Measured in CGHV96050F2-AMP (838179) under 100 uS pulse width, 10% duty, Pin 39.0 dBm (7.9 W)
9.6 GHz
11.8
75
9.8
45
Units
dB
W
dB
%
Features
8.4 - 9.6 GHz Operation
80 W POUT typical
10 dB Power Gain
55% Typical PAE
50 Ohm Internally Matched
<0.1 dB Power Droop
Applications
Marine Radar
Weather Monitoring
Air Traffic Control
Maritime Vessel Traffic Control
Port Security
Large Signal Models Available for ADS and MWO
Rev 3.4 - February 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



Wolfspeed CGHV96050F2
CGHV96050F2
2
Absolute Maximum Ratings (not simultaneous)
Parameter
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Drain Current
Maximum Forward Gate Current
Soldering Temperature1
Screw Torque
Symbol
VDSS
VGS
PDISS
TSTG
TJ
IDMAX
IGMAX
TS
τ
Rating
120
-10, +2
57.6 / 86.4
-65, +150
225
6
14.4
245
40
Thermal Resistance, Junction to Case
RθJC
Thermal Resistance, Junction to Case
RθJC
Case Operating Temperature3
TC
1.40
2.12
-40, +125
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library
3 See also, the Power Dissipation De-rating Curve on Page 9
Units
Volts
Volts
Watts
˚C
˚C
Amps
mA
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
(CW / Pulse)
25˚C
Pulse Width = 100 µs, Duty Cycle =
10%, PDISS = 86.4 W
CW, 85˚C, PDISS = 57.6 W
Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
DC Characteristics1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
RF Characteristics3
VGS(TH)
VQ
IDS
VBD
Small Signal Gain
S21
Min.
-3.8
11.5
100
10.0
Input Return Loss
S11
Output Return Loss
Power Output3, 4
Power Added Efficiency3, 4
S22
POUT
47
PAE
32
Output Mismatch Stress
VSWR
Typ.
-3.0
-3.0
13.0
11.8
–5.2
–12.3
70
45
Max.
-2.3
–2.1
–9.0
5:1
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV96050F2-AMP (AD-09115) under 100 μS pulse width, 10% duty
4 Fixture loss de-embedded using the following offsets. At 9.6 GHz, input and output = 0.50 dB
Units
V
V
A
V
dB
dB
dB
W
%
Y
Conditions
VDS = 10 V, ID = 14.4 mA
VDS = 40 V, ID = 500 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 14.4 mA
VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm,
Frequency = 8.4 - 9.6 GHz
VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm
VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm
VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm
No damage at all phase angles,
VDD = 40 V, IDQ = 500 mA,
Rev 3.4 - February 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



Wolfspeed CGHV96050F2
CGHV96050F2
3
CGHV96050F2 Typical Performance
Figure 1. Small Signal Gain and Return Loss vs Frequency
of CGHV96050F2 measured in CGHV96050F2-AMP
VDS = 40 V, IDQ = 500 mA
20
15
10
5
0
-5
-10
-15
-20
S11typ
S22typ
-25
S21typ
-30
7
7.5
8
8.5
9
9.5
10
10.5
11
Frequency (GHz)
Frequency (GHz)
Figure 2. Power Gain vs. Frequency and Input Power
VDD
=
40
V,
Pulse
WidPGthVs=Fr1eq0&0 Pμinsec,
Pulse 100 uS/ 10 % Duty
Duty
Cycle
=
10%
14
12
10
8
6
Psat
4
Pin = 40 dBm
Pin = 39 dBm
Pin = 38 dBm
2
Pin = 37 dBm
Pin = 36 dBm
0
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8 10.0
Frequency (GHz)
Frequency (GHz)
Rev 3.4 - February 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com







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