CGHV96130F

CGHV96130F 130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96130F Package Type: 440217 Typical Performance Over 8.4 - 9.6 GHz (TC = 25˚C) Parameter Linear Gain Output Power Power Gain Power Added Efficiency 8.4 GHz 13.6 184 8.7 36 8.6 GHz 13.1 173 8.4 33 8.8 GHz 13.3 173 8.4 33 9.0 GHz 13.5 168 8.3 33 9.2 GHz 13.8 163 8.0 34 9.4 GHz 13.0 165 8.2 38 9.6 GHz 11.8 153 7.8 39 Units dB W dB % Note: Measured in CGHV96130F-AMP (838179) under 100 μS pulse width, 10% duty, Pin 44.0 dBm (25.1 W) Features 8.4 - 9.6 GHz Operation 166 W POUT typical 7.5 dB Power Gain 42% Typical PAE 50 Ohm Internally Matched <0.3 dB Power Droop Applications Marine Radar Weather Monitoring Air Traffic Control Maritime Vessel Traffic Control Port Security Large Signal Models Available for ADS and MWO Rev 1.3 - August 2020 4600...