VSZ160N10MS

Features  Enhancement mode  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant VSZ160N10MS 100V/3A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 135 mΩ 150 mΩ 3 A SOT223 Part ID VSZ160N10MS Package Type SOT223 Marking 160N10M Tape and reel information 2500PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① PD TSTG , TJ Maximum power dissipation Storage and junction temperature range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C RθJL Thermal Resistance, Junction-to-Lead R JA Thermal Resistance, Junction-to-Ambient Rating 100 ±20 2 3 2 12 2.5 -55 to 150 Typical 15 50 Unit V V A A A A W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev B – JUN, 2020 www.vgsemi.com Electrical Characteristics VSZ160N10MS 100V/3A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V Zero Gate Voltage Drain Current VDS=100V,VGS=0V -- -- 1 uA IDSS Zero Gate Voltage Drain Current( Tj =125℃) VDS=100V,VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VG...