N-Channel Advanced Power MOSFET
Features
N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Tech...
Description
Features
N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; RoHS compliant
VSP008N10MSC
100V/85A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID
100 V
6 mΩ
7.5 mΩ
85
A
PDFN5x6
Part ID VSP008N10MSC
Package Type PDFN5x6
Marking 008N10MC
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested ①
IDSM
Continuous drain current @VGS=10V
EAS
Avalanche energy, single pulsed ②
PD
PDSM
Maximum power dissipation Maximum power dissipation ③
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
TC =25°C TC =25°C TC =100°C TC =25°C
TA=25°C TA=70°C
TC =25°C
TA=25°C
Rating
100 ±20 85 85 53 340 21 16.5 104 69
4 -55 to 150
Typical
1.8 30
Unit
V V A A A A A A mJ W W °C
Unit
°C/W °C/W
Copyright Vanguard Semiconductor Co., Ltd Rev C – OCT, 2019
www.vgsemi.com
Electrical Characteristics
Symbol
Parameter
VSP008N10MSC
100V/85A N-Channel Advanced Power MOSFET
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
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