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VS6880AT-K Dataheets PDF



Part Number VS6880AT-K
Manufacturers Vanguard Semiconductor
Logo Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Datasheet VS6880AT-K DatasheetVS6880AT-K Datasheet (PDF)

Features  Enhancement mode  100% Avalanche Tested  Fast Switching and High efficiency VS6880AT-K 68V/95A N-Channel Advanced Power MOSFET V DS 68 V R @ DS(on),TYP VGS=10 V 6.5 mΩ ID 95 A TO-220AB Part ID VS6880AT Package Type TO-220AB Marking 6880AT Tape and reel information 50pcs/Tube Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS ID IDM IDSM Diode continuous forward current Cont.

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Features  Enhancement mode  100% Avalanche Tested  Fast Switching and High efficiency VS6880AT-K 68V/95A N-Channel Advanced Power MOSFET V DS 68 V R @ DS(on),TYP VGS=10 V 6.5 mΩ ID 95 A TO-220AB Part ID VS6880AT Package Type TO-220AB Marking 6880AT Tape and reel information 50pcs/Tube Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS ID IDM IDSM Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TC =25°C TA=25°C TSTG,TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter Typical RθJC Thermal Resistance, Junction-to-Case 1.3 RθJA Thermal Resistance, Junction-to-Ambient 62.5 Rating 68 ±25 95 95 67 380 13 10 121 115 2 -55 to 175 Max 1.6 75 Unit V V A A A A A A mJ W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2020 www.vgsemi.com Electrical Characteristics VS6880AT-K 68V/95A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 68 -- -- V IDSS Zero Gate Voltage Drain Current VDS=65V,VGS=0V -- Zero Gate Voltage Drain Current(Tj=125℃) VDS=65V,VGS=0V -- -- 1 μA -- 100 μA IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2.7 3.2 3.8 V RDS(on) Drain-Source On-State Resistance ④ VGS=10V, ID=40A -- Tj=100℃ -- 6.5 8.5 mΩ 9.5 -- mΩ Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated) Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 2360 3145 4185 pF VDS=30V,VGS=0V, 190 250 335 pF f=1MHz 105 140 185 pF Rg Gate Resistance f=1MHz 0.5 2.3 5 Ω Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=35V,ID=40A, VGS=10V -- 53 71 nC -- 15 20 nC -- 12.4 18.6 nC Switching Characteristics Td(on) Tr Td(off) Tf Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD=35V, ID=40A, RG=3Ω, VGS=10V -- 12.4 -- ns -- 72 -- ns -- 42 -- ns -- 65 -- ns Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=40A,VGS=0V -- 0.8 1.2 V Trr Reverse Recovery Time Qrr Reverse Recovery Charge Tj=25℃,Isd=40A, VGS=0V di/dt=100A/μs -- 20 40 ns -- 15 30 nC NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 22A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 380μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2020 www.vgsemi.com Typical Characteristics VS6880AT-K 68V/95A N-Channel Advanced Power MOSFET VGS(TH), Gate -Source Voltage (V) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance ID, Drain-Source Current (A) VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature ID - Drain Current (A) ISD, Reverse Drain Current (A) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2020 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com Typical Characteristics VS6880AT-K 68V/95A N-Channel Advanced Power MOSFET VGS, Gate-Source Voltage (V) C, Capacitance (pF) VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg - Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage ZθJc Normalized Transient Thermal Resistance Pulse Width (s) Fig9 . Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Fig11. Switching Time Test Circuit and waveforms Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2020 www.vgsemi.com Marking Information VS6880AT-K 68V/95A N-Channel Advanced Power MOSFET Vs 6880AT XXXYWW 1st line: 2nd line: 3rd line: Vanguard Code(Vs),Vanguard Logo Part Number(6880AT) Date code (XXXYWW) XXX: Wafer Lot Number Code , code changed with Lot Number Y: Year Code,(e.g. E=2017, F=2018, G=2019, H=2020, etc) WW: Week Code (01 to 53) Copyright Vanguard Semiconducto.


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