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Features
Enhancement mode 100% Avalanche Tested Fast Switching and High efficiency
VS6880AT-K
68V/95A N-Channel Advanced Power MOSFET
V DS
68 V
R @ DS(on),TYP VGS=10 V
6.5 mΩ
ID
95 A
TO-220AB
Part ID VS6880AT
Package Type TO-220AB
Marking 6880AT
Tape and reel information 50pcs/Tube
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
VGS
Gate-Source voltage
IS ID IDM IDSM
Diode continuous forward current Continuous drain current @VGS=10V
Pulse drain current tested ①
Continuous drain current @VGS=10V
TC =25°C TC =25°C TC =100°C TC =25°C
TA=25°C TA=70°C
EAS
Avalanche energy, single pulsed ②
PD PDSM
Maximum power dissipation
Maximum power dissipation ③
TC =25°C
TA=25°C
TSTG,TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typical
RθJC
Thermal Resistance, Junction-to-Case
1.3
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Rating
68 ±25 95 95 67 380 13 10 121 115
2 -55 to 175
Max
1.6 75
Unit
V V A A A A A A mJ W W °C
Unit
°C/W °C/W
Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2020
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Electrical Characteristics
VS6880AT-K
68V/95A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
68
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS=65V,VGS=0V
--
Zero Gate Voltage Drain Current(Tj=125℃) VDS=65V,VGS=0V
--
--
1
μA
--
100
μA
IGSS
Gate-Body Leakage Current
VGS=±25V,VDS=0V
--
--
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA 2.7
3.2
3.8
V
RDS(on) Drain-Source On-State Resistance ④
VGS=10V, ID=40A
--
Tj=100℃
--
6.5
8.5
mΩ
9.5
--
mΩ
Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated)
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
2360 3145 4185
pF
VDS=30V,VGS=0V,
190 250 335
pF
f=1MHz
105 140 185
pF
Rg
Gate Resistance
f=1MHz
0.5
2.3
5
Ω
Qg Qgs Qgd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS=35V,ID=40A, VGS=10V
--
53
71
nC
--
15
20
nC
--
12.4 18.6
nC
Switching Characteristics
Td(on) Tr Td(off) Tf
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD=35V, ID=40A, RG=3Ω, VGS=10V
--
12.4
--
ns
--
72
--
ns
--
42
--
ns
--
65
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
ISD=40A,VGS=0V
--
0.8
1.2
V
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Tj=25℃,Isd=40A, VGS=0V di/dt=100A/μs
--
20
40
ns
--
15
30
nC
NOTE:
① Repetitive rating; pulse width limited by max junction temperature.
② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 22A, VGS =10V. Part not recommended for use above this value
③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 380μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2020
www.vgsemi.com
Typical Characteristics
VS6880AT-K
68V/95A N-Channel Advanced Power MOSFET
VGS(TH), Gate -Source Voltage (V)
ID, Drain-Source Current (A)
VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics
Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj
Normalized On Resistance
ID, Drain-Source Current (A)
VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics
Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature
ID - Drain Current (A)
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage
Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2020
VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area
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Typical Characteristics
VS6880AT-K
68V/95A N-Channel Advanced Power MOSFET
VGS, Gate-Source Voltage (V)
C, Capacitance (pF)
VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage
Qg - Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage
ZθJc Normalized Transient Thermal Resistance
Pulse Width (s) Fig9 . Normalized Maximum Transient Thermal Impedance
Fig10. Unclamped Inductive Test Circuit and waveforms
Fig11. Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd Rev A – NOV, 2020
www.vgsemi.com
Marking Information
VS6880AT-K
68V/95A N-Channel Advanced Power MOSFET
Vs 6880AT XXXYWW
1st line: 2nd line: 3rd line:
Vanguard Code(Vs),Vanguard Logo Part Number(6880AT) Date code (XXXYWW) XXX: Wafer Lot Number Code , code changed with Lot Number Y: Year Code,(e.g. E=2017, F=2018, G=2019, H=2020, etc) WW: Week Code (01 to 53)
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