VS6411AS

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant  MSL:Level 1 compliant VS6411AS 60V/11A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 12 mΩ 14 mΩ 11 A SOP8 Part ID VS6411AS Package Type SOP8 Marking 6411AS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C RθJL Rθ JA Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient Rating 60 ±20 2.6 11 7 44 91 3.1 -55 to 150 Typical 24 40 Unit V V A A A A mJ W °C Unit °C/W °C/W Copyright© Vanguard Semiconductor Co., Ltd Rev B – JUL, 2019 www.vgsemi.com Electrical Characteristics VS6411AS 60V/11A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 -- -- V Zero Gate Voltage Drain Current VDS=60V,VGS=0V -- -- 1 uA IDS...