VSM003N06HS-G

Features  N-Channel，10V Logic Level Control  Enhancement mode  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM003N06HS-G 65V/150A N-Channel Advanced Power MOSFET V DS 65 V R @ DS(on),TYP VGS=10 V 3.0 mΩ ID 150 A TO-263 Part ID VSM003N06HS-G Package Type TO-263 Marking 003N06H Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C TC =25°C TC =100°C TA=25°C TA=70°C Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Rating 65 ±20 150 150 106 600 19 15 100 125 63 2 1.3 -55 to 175 Typical 1.2 62.5 Unit V V A A A A A A mJ W W W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – DEC, 2019 www.vgsemi.com Electrical Characteristics Symbol Parameter VSM003N06HS-G 65V/150A N-Channel Advanced Power MOSFET Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise ...