VS4110AT-Y

Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS4110AT-Y 100V/200A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 100 V 4.5 mΩ 200 A TO-220AB Part ID VS4110AT-Y Package Type TO-220AB Marking 4110AT Tape and reel information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS ID IDM IDSM Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C EAS PD PDSM Avalanche energy, single pulsed ② Maximum power dissipation Maximum power dissipation ③ TC =25°C TA=25°C TSTG,TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter Typical RθJC Thermal Resistance, Junction-to-Case 0.4 RθJA Thermal Resistance, Junction-to-Ambient 62.5 Rating 100 ±25 200 200 142 800 15 12 900 375 2 -55 to 175 Max 0.5 75 Unit V V A A A A A A mJ W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – SEP, 2020 www.vgsemi.com Electrical Characteristics Symbol Parameter VS4110AT-Y 100V/200A N-Channel Advanced Power MOSFET Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V IDSS IGSS ...