Document
Features
N-Channel,10V Logic Level Control Enhancement mode Fast Switching Pb-free lead plating; RoHS compliant
VS2N60AZ
600V/2A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V ID
600 V
5
Ω
2
A
SOT223
Part ID VS2N60AZ
Package Type SOT223
Marking 2N60AZ
Tape and reel information
2500PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
IS
Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested ①
PD
Maximum power dissipation
TSTG , TJ
Storage and junction temperature range
Thermal Characteristics
Symbol
Parameter
TA =25°C TA =25°C TA =70°C TA =25°C TA =25°C TA =70°C
RθJL R JA
Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient
Rating
600 ±30
2 2 1.6 8 2.5 1.6 -55 to 150
Typical
15 50
Unit
V V A A A A W W °C
Unit
°C/W °C/W
Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019
www.vgsemi.com
Electrical Characteristics
VS2N60AZ
600V/2A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA 600
--
--
V
Zero Gate Voltage Drain Current
VDS=600V,VGS=0V
--
--
1
uA
IDSS
Zero Gate Voltage Drain Current( Tj =125℃) VDS=480V,VGS=0V
--
--
50
uA
IGSS
Gate-Body Leakage Current
VGS=±30V,VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 2.4
--
3.7
V
RDS(ON)
Drain-Source On-State Resistance ②
VGS=10V, ID=0.5A
--
5
6.2
Ω
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
160 210 260
pF
VDS=30V,VGS=0V,
--
25
--
pF
f=1MHz
--
5
--
pF
f=1MHz
--
6.6
--
Ω
--
5.4
--
nC
VDS=480V,ID=2A,
--
2.3
--
nC
VGS=10V
--
1.0
--
nC
t d(on) tr t d(off) tf
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD=300V, ID=2A, RG=10Ω, VGS=10V
--
5.8
--
ns
--
6.6
--
ns
--
11
--
ns
--
45
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD t rr
Q rr
NOTE:
Forward on voltage Reverse Recovery Time Reverse Recovery Charge
ISD=2A,VGS=0V
Tj=25℃,Isd=2A, VGS=0V di/dt=100A/μs
① Repetitive rating; pulse width limited by max junction temperature.
② Pulse width ≤ 380μs; duty cycle≤ 2%.
--
0.9
1.2
V
--
210
--
ns
--
0.94
--
uC
Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019
www.vgsemi.com
Typical Characteristics
VS2N60AZ
600V/2A N-Channel Advanced Power MOSFET
VGS(TH), Gate -Source Voltage (V)
ID, Drain-Source Current (A)
ID, Drain-Source Current (A)
VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics
Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj
Tc, Case Temperature (°C)
Normalized On Resistance
VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics
Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Tj
ID - Drain Current (A)
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage
Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019
VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area
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Typical Characteristics
VS2N60AZ
600V/2A N-Channel Advanced Power MOSFET
VGS, Gate-Source Voltage (V)
C, Capacitance (pF)
VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage
Qg - Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage
ZθJA Normalized Transient Thermal Resistance
Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance
Fig10. Unclamped Inductive Test Circuit and waveforms
Fig11. Switching Time Test Circuit and waveforms
Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019
www.vgsemi.com
Marking Information
VS2N60AZ
600V/2A N-Channel Advanced Power MOSFET
Vs 2N60AZ XXXYWW
1st line: 2nd line: 3rd line:
Vanguard Code(Vs), Vanguard Logo Part Number(2N60AZ) Date code (XXXYWW) XXX: Wafer Lot Number Code , code changed with Lot Number Y: Year Code,(e.g. E=2017, F=2018, G=2019, H=2020, etc) WW: Week Code (01 to 53)
Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019
www.vgsemi.com
SOT223 Package Outline Data
VS2N60AZ
600V/2A N-Channel Advanced Power MOSFET
Symbol
A A1 A2 b b2 c D E E1 e e1 L θ
Dimensions (unit: mm)
Min
Typ
Max
1.50 1.65 1.80
0.02 0.06 0.10
1.50 1.60 1.70
0.66 0.72 0.80
2.90 3.00 3.10
0.23 0.30 0.35
6.30 6.50 6.70
6.70 7.00 7.30
3.30 3.50 3.70
2.30 REF
4.60 REF
0.75
--
1.15
0.