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VS2N60AZ Dataheets PDF



Part Number VS2N60AZ
Manufacturers Vanguard Semiconductor
Logo Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Datasheet VS2N60AZ DatasheetVS2N60AZ Datasheet (PDF)

Features  N-Channel,10V Logic Level Control  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 600 V 5 Ω 2 A SOT223 Part ID VS2N60AZ Package Type SOT223 Marking 2N60AZ Tape and reel information 2500PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward curr.

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Features  N-Channel,10V Logic Level Control  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 600 V 5 Ω 2 A SOT223 Part ID VS2N60AZ Package Type SOT223 Marking 2N60AZ Tape and reel information 2500PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =70°C TA =25°C TA =25°C TA =70°C RθJL R JA Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient Rating 600 ±30 2 2 1.6 8 2.5 1.6 -55 to 150 Typical 15 50 Unit V V A A A A W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019 www.vgsemi.com Electrical Characteristics VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 600 -- -- V Zero Gate Voltage Drain Current VDS=600V,VGS=0V -- -- 1 uA IDSS Zero Gate Voltage Drain Current( Tj =125℃) VDS=480V,VGS=0V -- -- 50 uA IGSS Gate-Body Leakage Current VGS=±30V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 2.4 -- 3.7 V RDS(ON) Drain-Source On-State Resistance ② VGS=10V, ID=0.5A -- 5 6.2 Ω Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge Switching Characteristics 160 210 260 pF VDS=30V,VGS=0V, -- 25 -- pF f=1MHz -- 5 -- pF f=1MHz -- 6.6 -- Ω -- 5.4 -- nC VDS=480V,ID=2A, -- 2.3 -- nC VGS=10V -- 1.0 -- nC t d(on) tr t d(off) tf Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD=300V, ID=2A, RG=10Ω, VGS=10V -- 5.8 -- ns -- 6.6 -- ns -- 11 -- ns -- 45 -- ns Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD t rr Q rr NOTE: Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=2A,VGS=0V Tj=25℃,Isd=2A, VGS=0V di/dt=100A/μs ① Repetitive rating; pulse width limited by max junction temperature. ② Pulse width ≤ 380μs; duty cycle≤ 2%. -- 0.9 1.2 V -- 210 -- ns -- 0.94 -- uC Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019 www.vgsemi.com Typical Characteristics VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET VGS(TH), Gate -Source Voltage (V) ID, Drain-Source Current (A) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Tc, Case Temperature (°C) Normalized On Resistance VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) ISD, Reverse Drain Current (A) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com Typical Characteristics VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET VGS, Gate-Source Voltage (V) C, Capacitance (pF) VDS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg - Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Fig11. Switching Time Test Circuit and waveforms Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019 www.vgsemi.com Marking Information VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET Vs 2N60AZ XXXYWW 1st line: 2nd line: 3rd line: Vanguard Code(Vs), Vanguard Logo Part Number(2N60AZ) Date code (XXXYWW) XXX: Wafer Lot Number Code , code changed with Lot Number Y: Year Code,(e.g. E=2017, F=2018, G=2019, H=2020, etc) WW: Week Code (01 to 53) Copyright Vanguard Semiconductor Co., Ltd Rev A – JUNE, 2019 www.vgsemi.com SOT223 Package Outline Data VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET Symbol A A1 A2 b b2 c D E E1 e e1 L θ Dimensions (unit: mm) Min Typ Max 1.50 1.65 1.80 0.02 0.06 0.10 1.50 1.60 1.70 0.66 0.72 0.80 2.90 3.00 3.10 0.23 0.30 0.35 6.30 6.50 6.70 6.70 7.00 7.30 3.30 3.50 3.70 2.30 REF 4.60 REF 0.75 -- 1.15 0.


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