VSO050P06MS

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSO050P06MS -60V/-7A P-Channel Advanced Power MOSFET V DS -60 V R @ DS(on),TYP VGS=-10 V 39 mΩ R @ DS(on),TYP VGS=-4.5 V 49 mΩ ID -7 A SOP8 Part ID VSO050P06MS Package Type SOP8 Marking 050P06M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=-10V Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =70°C TA =25°C TA =25°C TA =70°C RθJL Thermal Resistance, Junction-to-Lead RθJA Thermal Resistance, Junction-to-Ambient Rating -60 ±20 -2.6 -7 -5.5 -28 25 3.1 2 -55 to 150 Typical 24 40 Unit V V A A A A mJ W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A– AUG, 2019 www.vgsemi.com VSO050P06MS -60V/-7A P-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -60 -- -- V Zero Gate Voltage Drain Current VDS=-60V,VGS=0V -- -- -1 μA IDSS Zero Gate ...