VSF450N70HS2

VSF450N70HS2 700V/11A N-Channel Advanced Power MOSFET Features  Extremely low gate charge  100% avalanche tested  Super Junction Technology  Pb-free lead plating; RoHS compliant; Halogen free  Wide creepage distance of 4.25mm between the leads V DS R @ DS(on),TYP VGS=10V ID 700 V 350 mΩ 11 A TO-220WF Part ID VSF450N70HS2 Package Type TO-220WF Marking 450N70H Tube Information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C TC =100°C Rating 700 ±30 11 11 7 33 206 26 10 -55 to 150 Typical 4.7 62.5 Unit V V A A A A mJ W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – MAR, 2019 www.vgsemi.com Electrical Characteristics VSF450N70HS2 700V/11A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 700 -- -- V Zero Gate Voltage Drain Current VDS=700V,VGS=0V -- -- 1 μ...