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Power MOSFET. VS4604AT-A Datasheet

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Power MOSFET. VS4604AT-A Datasheet






VS4604AT-A MOSFET. Datasheet pdf. Equivalent




VS4604AT-A MOSFET. Datasheet pdf. Equivalent





Part

VS4604AT-A

Description

N-Channel Advanced Power MOSFET

Manufacture

Vanguard Semiconductor

Datasheet
Download VS4604AT-A Datasheet


Vanguard Semiconductor VS4604AT-A

VS4604AT-A; Features  Enhancement mode  Very l ow on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiency 100% Avalanche Tested  Pb-free lea d plating; RoHS compliant VS4604AT-A 4 0V/150A N-Channel Advanced Power MOSFET V DS 40 V R @ DS(on),TYP VGS=10 V 3.2 mΩ R @ DS(on),TYP VGS=4.5V 4.0 mΩ ID 150 A TO-220AB Part ID VS46 04AT-A Package Type TO-220AB M.


Vanguard Semiconductor VS4604AT-A

arking 4604AT Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbo l Parameter V(BR)DSS VGS Drain-Sourc e breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forwa rd current Continuous drain current @VG S=10V Pulse drain current tested ① Av alanche energy, single pulsed ② TC = 25°C TC =25°C TC =100°C.


Vanguard Semiconductor VS4604AT-A

TC =25°C PD Maximum power dissipatio n PDSM Maximum power dissipation ③ TC =25°C TC =100°C TA=25°C TA=70°C TSTG , TJ Storage and Junction Temper ature Range Thermal Characteristics Sy mbol Parameter R JC Thermal Resis tance, Junction-to-Case R JA Therm al Resistance, Junction-to-Ambient Cop yright Vanguard Semiconductor Co., L td Rev A – AUG, 2019 Rating 40.



Part

VS4604AT-A

Description

N-Channel Advanced Power MOSFET

Manufacture

Vanguard Semiconductor

Datasheet
Download VS4604AT-A Datasheet




 VS4604AT-A
Features
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching and High efficiency
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VS4604AT-A
40V/150A N-Channel Advanced Power MOSFET
V DS
40 V
R @ DS(on),TYP VGS=10 V
3.2 mΩ
R @ DS(on),TYP VGS=4.5V
4.0 mΩ
ID
150 A
TO-220AB
Part ID
VS4604AT-A
Package Type
TO-220AB
Marking
4604AT
Tape and reel
information
50pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
ID
IDM
EAS
Diode continuous forward current
Continuous drain current @VGS=10V
Pulse drain current tested
Avalanche energy, single pulsed
TC =25°C
TC =25°C
TC =100°C
TC =25°C
PD
Maximum power dissipation
PDSM
Maximum power dissipation
TC =25°C
TC =100°C
TA=25°C
TA=70°C
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case
RJA
Thermal Resistance, Junction-to-Ambient
CopyrightVanguard Semiconductor Co., Ltd
Rev A AUG, 2019
Rating
40
±20
150
150
106
600
196
115
58
2
1.3
-55 to 175
Unit
V
V
A
A
A
A
mJ
W
W
W
W
°C
Typical
1.3
62.5
Unit
°C/W
°C/W
www.vgsemi.com





 VS4604AT-A
Typical Characteristics
VS4604AT-A
40V/150A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
40
Zero Gate Voltage Drain Current
VDS=40V,VGS=0V
--
IDSS
Zero Gate Voltage Drain Current(Tj=125) VDS=40V,VGS=0V
--
--
--
V
--
1
μA
--
100
μA
IGSS
VGS(TH)
RDS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS=±20V,VDS=0V
--
VDS=VGS,ID=250μA 1.2
VGS=10V, ID=40A
--
Tj=100
--
--
±100
nA
1.7
2.5
V
3.2
4
4.6
--
RDS(ON)
Drain-Source On-State Resistance
VGS=4.5V, ID=20A
--
4
Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated)
5
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
3900 4590 5280
pF
VDS=20V,VGS=0V,
345 405 465
pF
f=1MHz
290 340 390
pF
f=1MHz
--
2.9
--
Ω
--
79
--
nC
VDS=20V,ID=40A,
--
37
--
nC
VGS=10V
--
13
--
nC
--
14
--
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=20V,
ID=40A,
RG=3Ω,
VGS=10V
--
10
--
ns
--
111
--
ns
--
84
--
ns
--
103
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
ISD=40A,VGS=0V
t rr
Reverse Recovery Time
Tj=25,Isd=40A,
VGS=0V
Q rr
Reverse Recovery Charge
di/dt=100A/μs
NOTE: Repetitive rating; pulse width limited by max junction temperature.
--
0.8
1.2
V
--
16
--
ns
--
8
--
nC
Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 28A, VGS =10V. Part not recommended for use above this value
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
Pulse width ≤ 380μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A AUG, 2019
www.vgsemi.com





 VS4604AT-A
Typical Characteristics
VS4604AT-A
40V/150A N-Channel Advanced Power MOSFET
VDS, Drain -Source Voltage (V)
Fig1. Typical Output Characteristics
Tj - Junction Temperature (°C)
Fig2. VGS(TH) Gate -Source Voltage Vs. Tj
Tc, Case Temperature (°C)
Tc, Case Temperature (°C)
Fig2. Maximum Drain Current Vs.Case Temperature
VGS, Gate -Source Voltage (V)
Fig3. Typical Transfer Characteristics
Tj - Junction Temperature (°C)
Fig4. Normalized On-Resistance Vs. Temperature
VSD, Source-Drain Voltage (V)
Fig5. Typical Source-Drain Diode Forward Voltage
CopyrightVanguard Semiconductor Co., Ltd
Rev A AUG, 2019
VDS, Drain -Source Voltage (V)
Fig6. Maximum Safe Operating Area
www.vgsemi.com



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