N-Channel Advanced Power MOSFET
Features
Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiency 100% Ava...
Description
Features
Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiency 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VS4604AT-A
40V/150A N-Channel Advanced Power MOSFET
V DS
40 V
R @ DS(on),TYP VGS=10 V
3.2 mΩ
R @ DS(on),TYP VGS=4.5V
4.0 mΩ
ID
150 A
TO-220AB
Part ID VS4604AT-A
Package Type TO-220AB
Marking 4604AT
Tape and reel information 50pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS ID IDM
EAS
Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TC =100°C TC =25°C
PD
Maximum power dissipation
PDSM
Maximum power dissipation ③
TC =25°C TC =100°C
TA=25°C TA=70°C
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Copyright Vanguard Semiconductor Co., Ltd Rev A – AUG, 2019
Rating
40 ±20 150 150 106 600 196 115 58
2 1.3 -55 to 175
Unit
V V A A A A mJ W W W W °C
Typical
1.3 62.5
Unit
°C/W °C/W
www.vgsemi.com
Typical Characteristics
VS4604AT-A
40V/150A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μ...
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