VSO009N06MS-G

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSO009N06MS-G 60V/15A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 8 mΩ 14 mΩ 15 A SOP8 Part ID VSO009N06MS-G Package Type SOP8 Marking 009N06MG Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C RθJL R JA Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient Rating 60 ±20 2.6 15 9 60 12 3.1 -55 to 150 Typical 24 40 Unit V V A A A A mJ W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Preliminary – MAR, 2019 www.vgsemi.com Electrical Characteristics Symbol Parameter VSO009N06MS-G 60V/15A N-Channel Advanced Power MOSFET Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 -- -- V IDSS Zero Gate Voltage Drain Current( Tj =25℃) VDS=60V,VGS=0V -- -- 1 uA Ze...