VSF600N70HS3

VSF600N70HS3 700V/8A N-Channel Advanced Power MOSFET Features  Extremely low gate charge  100% avalanche tested  Super Junction Technology  Pb-free lead plating; RoHS compliant; Halogen free V DS R @ DS(on),TYP VGS=10V ID 700 V 520 mΩ 8 A TO-220SF Part ID VSF600N70HS3 Package Type TO-220SF Marking 600N70H Tube Information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics TC =25°C Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Rating 700 ±30 8 8 5 32 175 25 -55 to 150 Typical 5 62.5 Unit V V A A A A mJ W °C Unit °C/W °C/W Copyright© Vanguard Semiconductor Co., Ltd Rev A - AUG, 2019 www.vgsemi.com Electrical Characteristics VSF600N70HS3 700V/8A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 700 -- -- V IDSS Zero Gate Voltage Drain Current VDS=700V,VGS=0V -- Zero Gate Voltage Drain Current(Tj=125℃) VDS=560V,VGS=0V -- -- 1 μA -- 5...