HMS21N60F

HMS21N60,HMS21N60F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant T VDS@ jmax 650 V RDS(ON) MAX 180 mΩ ID 21 A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking HM621N60 TO-220 HM621N60 HM621N60F TO-220F HM621N60F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) ID (DC) IDM (pluse) Maximum Power Dissipation(Tc=25℃) PD Derate above 25°C Single pulse avalanche energy (Note 2) EAS Avalanche current(Note 1) IAR Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR TO-220 TO-220F HMS21N60 HMS21N60F 600 ±30 21 21* 13.2 13.2* 63 63* 200 34 1.6 0.27 690 7 1 Unit V V A A A W W/°C mJ A mJ ==p = =eC =p LL = ...