P-Channel Enhancement Mode Power MOSFET
Description
The HM70P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
● VDS =-40V,ID =-70A RDS(ON) <10mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalanc...
