Document
HM8810E
Dual N-Channel Enhancement Mode Power MOSFET
Description
The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Schematic diagram
8810
Marking and pin Assignment
Marking and pin Assignment
Application
●PWM application ●Load switch
T6623
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
8810
HM8810E
TSSOP8/SOT-23-6L
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±12
7 30 1.5 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83.3
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
Page 1
Min Typ Max Unit
20
-
V
-
-
1
μA
v10
Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
IGSS
VGS(th) RDS(ON)
gFS
Clss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd
VSD IS
VGS=±10V,VDS=0V
HM8810E
-
-
±10
μA
VDS=VGS,ID=250μA VGS=4.5V, ID=6.5A VGS=2.5V, ID=5.5A
VDS=5V,ID=7A
0.55 0.7 0.95
V
-
15
21
mΩ
-
20
27
mΩ
-
20
-
S
VDS=10V,VGS=0V, F=1.0MHz
- 1150
-
PF
- 185
-
PF
- 145
-
PF
-
6
nS
VDD=10V,RL=1.35Ω
-
13
nS
VGS=5V,RGEN=3Ω
-
52
nS
-
16
nS
VDS=10V,ID=7A, VGS=4.5V
-
15
nC
-
0.8
-
nC
-
3.2
-
nC
VGS=0V,IS=1A
-
-
1.2
V
-
-
7
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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HM8810E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
D
Vout
Vgs
Rgen
G
td(on)
VOUT
ton
toff
tr
td(off)
tf
90%
INVERTED
10%
90% 10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Rdson On-Resistance(mΩ)
PD Power(W)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Normalized On-Resistance
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
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HM8810E
C Capacitance (pF)
ID- Drain Current (A)
Rdson (mΩ)
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Figure 8 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
ID- Drain Current (A)
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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Vgs Gate-Source Voltage (V)
r(t),Normalized Effective Transient Thermal Impedance
HM8810E
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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HM8810E
TSSOP-8 PACKAGE INFORMATION
Symbol
D E b c E1 A A2 A1 e L H Θ
Dimensions In Millimeters
Min
Max
2.900
3.100
4.300
4.500
0.190
0.300
0.090
0.200
6.250
6.550
1.100
0.800
1.000
0.020
0.150
0.65(BSC)
0.500
0.700
0.25(TYP)
1°
7°
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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HM8810E
SOT23-6L PACKAGE INFORMATION
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
Page
v1.1
HM8810E
ATTENTION:
■ Any and all H&M SEMI products described or contained herein do not have specifications that can handle applications that
require extremel.