HM25P03K

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM25P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -25A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery Switch ●Load switch ●Power management HM25P03K D G S Schematic diagram HM25P03K Marking and pin assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package HM25P03K HM25P03K TO-252-2L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TST G Limit -30 ±20 -25 -75 50 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Page 1 Min Typ Max Unit -30 -33 - V v1.0 Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshol...