HM3305

HM3305 N-Channel Enhancement Mode Power MOSFET Description The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability HM3305 Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package HM3305 HM3305 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID ID (100℃) Pulsed Drain Current IDM Maximum Power Dissipation PD Limit 60 ±20 150 105 600 220 Unit V V A A A W Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com v1.0 HM3305 Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG 1.47 1400 -55 To 175 W/℃ mJ ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Not...