Document
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SB507
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in power amplifier and switching circuits.
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD PD TJ TSTG
Rating Unit
-60
V
-60
V
-5
V
-3
A
2
W
30
W
+150
oC
-55 to +150 oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151 Φ(3.83)
.173(4.40) Typ
.055(1.39)
.045(1.15)
.625(15.87) .570(14.48)
123
.295(7.49) .220(5.58)
.350(8.90) .330(8.38)
.640 (16.25)
Typ
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 (2.54)
Typ
.024(0.60) .014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO
-60
Collector-Emitter Breakdown Voltage
BVCEO
-60
Emitter-Base Breakdown Voltage
BVEBO
-5
Collector Cutoff Current
ICBO
-
ICEO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
Base-Emitter On Voltage(1)
VBE(on)
-
DC Current Gain(1)
hFE1
40
hFE2
40
Transition Frequency
fT
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max Unit
Test Conditions
-
-
V IC=-1mA, IE=0
-
-
V IC=-10mA, IB=0
-
-
V IE=-1mA, IC=0
-
-0.1 mA VCB=-20V, IE=0
-
-5 mA VCE=-60V, IB=0
-
-1
mA VEB=-4V, IC=0
-
-1
V IC=-2A, IB=-0.2A
-
-1.5
V IC=-1A, VCE=-2V
-
-
- IC=-0.1A, VCE=-2V
-
320
- IC=-1A, VCE=-2V
8
- MHz IC=-500mA, VCE=-5V, f=100MHz
Classification of hFE2
Rank
C
D
Range
40~80
60~120
E 100~200
F 160~320
.