SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W
Technical Data
…designed for Low Frequency Power Amplifier.
F Colle...
SILICON PLASTIC POWER
TRANSISTOR NPN 2SD880Y 3A 30W
Technical Data
…designed for Low Frequency Power Amplifier.
F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package
MAXIMUM RATINGS
Rating
Symbol
Value
Collector- Emitter Voltage
Collector – Base Voltage Emitter Base Voltage Collector Current – Continuos
Base Current
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
V CEO
V CB V EB
IC
IB
PD
Tj,Tstg
60
60 7 3
0.3
30 0.24 -55 to +150
Symbol
Max.
Unit
Vdc Vdc Vdc Adc Adc Watts W/°C °C
Unit
Thermal resistance junction to case
R thjc
4.16
°C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic
Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Breakdown Voltage VCEO(sus) 60 [ Ic =50 mAdc, IB = 0 ]
Collector Cutoff Current
ICB0
[ VCB = 60 Vdc, IB = 0 ]
Collector–Base Breakdown [ Ic =1mAdc, IE = 0 ] Emitter Cutoff Current [VEB=7Vdc, IC=0]
Voltage BVCBO 60 IEBO
* ON CHARACTERISTICS (1):
DC Current Gain [ Ic = 0.5 Adc , VCE = 5.0 Vdc ] [ Ic =3 Adc , VCE =5.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB = 0.3Adc )
hFE 100 20
VCE(sat)
Emitter–Base Saturation [ Ic =0.5Adc, VCE =5V ]
Voltage VBE(ON)
Vdc 100 µAdc
Vdc 100 µAdc
200
1
Vdc
1 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
fT
3
[Ic=0.5Adc,VCE=5Vdc,ftest=1.0 MHz ]
Collector Output Capacitance
COB...
